參數(shù)資料
型號(hào): MBRM120LT3G
廠商: ON SEMICONDUCTOR
元件分類(lèi): 參考電壓二極管
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA
封裝: LEAD FREE, PLASTIC, CASE 457-04, POWERMITE-2
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 72K
代理商: MBRM120LT3G
MBRM120L
http://onsemi.com
3
I
R
,
I
R
,
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
20
0
V
R
, REVERSE VOLTAGE (VOLTS)
10E3
1.0E3
100E6
10E6
1.0E6
V
R
, REVERSE VOLTAGE (VOLTS)
5.0
10
15
20
0
100E6
10E6
5.0
10
15
T
J
= 85
°
C
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
100E3
10E3
1.0E3
P
F
,
I
O
,
I
pk
/I
o
= 5
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
45
75
25
T
L
, LEAD TEMPERATURE (
°
C)
1.8
1.6
1.2
1.0
0.8
0.2
0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.2
0
0.7
0.6
0.5
0.3
0.1
0
1.0
55
115
105
1.4
0.4
0.8
1.2
1.6
0.4
125
SQUARE
WAVE
dc
I
pk
/I
o
=
I
pk
/I
o
= 10
I
pk
/I
o
= 20
I
pk
/I
o
= 20
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
=
SQUARE WAVE
dc
0.6
0.4
FREQ = 20 kHz
0.6
1.4
0.2
35
65
85
95
T
J
,
°
C
C
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
12
0
V
R
, REVERSE VOLTAGE (VOLTS)
1000
100
10
V
R
, DC REVERSE VOLTAGE (VOLTS)
10
20
0
95
75
65
6.0
2.0
4.0
8.0
10
12
14
2.0
4.0
8.0
6.0
85
115
125
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation:
T
J
= T
Jmax
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
R
tja
= 33.72
°
C/W
119
°
C/W
277.35
°
C/W
338
°
C/W
T
J
= 25
°
C
20
14
16
18
105
16
18
204
°
C/W
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