參數(shù)資料
型號(hào)： MBT3946DW1T1
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Dual General Purpose Transistor
中文描述： 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： CASE 419B-02, SC-88, 6 PIN
文件頁數(shù)： 2/10頁
文件大?。?/td> 422K
代理商： MBT3946DW1T1
LESHAN RADIO COMPANY, LTD.
MBT3904–2/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
μ
Adc, I
E
= 0)
(I
C
= –10
μ
Adc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc, I
C
= 0)
(I
E
= –10
μ
Adc, I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc) MBT3906DW1T1 (PNP)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc) MBT3906DW1T1 (PNP)
ON CHARACTERISTICS (2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= –0.1 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –10 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –50 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –100 mAdc, V
CE
= –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 50 mAdc, I B = 5.0 mAdc)
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc,
f = 100 MHz)
(I
C
= –10 mAdc, V
CE
= –20 Vdc,
f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)
(V
CB
= –5.0 Vdc, I
E
= 0,
f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)
(V
EB
= –0.5 Vdc, I
C
= 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width
<
300 ms; Duty Cycle
<
2.0%.
Symbol
Min
Max
Unit
V
(BR)CEO
Vdc
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
40
–40
—
—
V
(BR)CBO
Vdc
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
60
–40
—
—
V
(BR)EBO
Vdc
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
6.0
–5.0
—
—
I
BL
nAdc
MBT3904DW1T1 (NPN)
—
—
50
–50
I
CEX
nAdc
MBT3904DW1T1 (NPN)
—
—
50
–50
h
FE
Vdc
MBT3904DW1T1 (NPN)
40
70
100
60
30
60
80
100
60
30
—
—
—
—
—
—
—
—
—
—
MBT3906DW1T1 (PNP)
V
CE(sat)
Vdc
MBT3904DW1T1 (NPN)
—
—
—
—
0.2
0.3
– 0.25
–0.4
MBT3906DW1T1 (PNP)
V
BE(sat)
Vdc
MBT3904DW1T1 (NPN)
0.65
—
–0.65
—
0.85
0.95
–0.85
–0.95
MBT3906DW1T1 (PNP)
f
T
MHz
MBT3904DW1T1 (NPN)
300
—
MBT3906DW1T1 (PNP)
250
—
C
obo
pF
—
—
4.0
4.5
MBT3906DW1T1 (PNP)
C
ibo
pF
—
—
8.0
10.0
MBT3906DW1T1 (PNP)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBT3946DW1T1G 功能描述:兩極晶體管 - BJT 200mA 40V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MBT3946DW1T1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MBT3946DW1T2 功能描述:兩極晶體管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MBT3946DW1T2G 功能描述:兩極晶體管 - BJT 200mA 40V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MBT42N 制造商:APEM 功能描述:Switch Slide 4PDT Extended Top Slide 0.3A 125VAC 30VDC PC Pins Bracket Mount/Through Hole
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