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參數(shù)資料
| 型號： | MC33169 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | GaAs POWER AMPLIFIER SUPPORT IC |
| 中文描述： | 砷化鎵功率放大器支持IC |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 206K |
| 代理商： | MC33169 |
MC33169
8
MOTOROLA ANALOG IC DEVICE DATA
MRF IC 093
MC33169
Figure 10. Class 4 GSM with a Two–Stage Integrated Power Amplifier (I.P.A.)
C2 0.1
C1 0.1
Cp 1.0
MMBD701
LT1
14
13
12
11
10
9
8
1
2
3
4
5
6
7
5
6
7
8
4
3
2
1
8
7
6
5
4
3
2
1
9
10
11
12
13
14
15
16
3.0 V
0 V
Idle
VBatt
= 4.8 V
(4 cells
NlCd/NIMH)
Control
Input
3.0 V
0 V
C3 1.0
C4 1.0
MMSF4N01HD
Drain
G
S
S
.047
47 pF
VG2 tune
VG1 tune
8.2 nH
50
In
6.8 pF
3.3 k
1.0 k
In
Out
Out
Grounded Backside
RF
330
5.6 pF
5.6 pF
47 pF
50
Out
4 mm
30
2 mm
30
47 pF
.047
–4.0 V
Ci 0.22
100
100
Cf
0.22
68
Figure 11. Transfer Characteristic for
Gate Drive Output
VTx (V)
1.4
0
0.5
1.0
1.5
2.0
2.5
1.2
1.0
0.8
0.6
0.4
0.2
0
I
TA = 25
°
C
VBatt = 4.8 V
VIdle = 3.0 V
VBatt = 4.8 V
Pin = 10 dBm
VIdle = 3.0 V
Vramp: 40 Hz sinusoidal voltage
set for 95% AM depth on RF
Peak output
power: 34.6 dBm
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