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| 型號： | MC7457VG867NC |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, 867 MHz, RISC PROCESSOR, CBGA483 |
| 封裝： | 29 X 29 MM, 3.22 MM HEIGHT, 1.27 MM PITCH, ROHS COMPLIANT, CERAMIC, BGA-483 |
| 文件頁數(shù)： | 59/73頁 |
| 文件大?。?/td> | 1715K |
| 代理商： | MC7457VG867NC |
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MPC7457 RISC Microprocessor Hardware Specifications, Rev. 7
62
Freescale Semiconductor
System Design Information
The Bergquist Company
800-347-4572
18930 West 78th St.
Chanhassen, MN 55317
Internet: www.bergquistcompany.com
Chomerics, Inc.
781-935-4850
77 Dragon Ct.
Woburn, MA 01888-4014
Internet: www.chomerics.com
Dow-Corning Corporation
800-248-2481
Dow-Corning Electronic Materials
2200 W. Salzburg Rd.
Midland, MI 48686-0997
Internet: www.dow.com
Shin-Etsu MicroSi, Inc.
888-642-7674
10028 S. 51st St.
Phoenix, AZ 85044
Internet: www.microsi.com
Thermagon Inc.
888-246-9050
4707 Detroit Ave.
Cleveland, OH 44102
Internet: www.thermagon.com
The following section provides a heat sink selection example using one of the commercially available heat
sinks.
9.8.3
Heat Sink Selection Example
For preliminary heat sink sizing, the die-junction temperature can be expressed as follows:
Tj = TI + Tr + (RθJC + Rθint + Rθsa) × Pd
where:
Tj is the die-junction temperature
TI is the inlet cabinet ambient temperature
Tr is the air temperature rise within the computer cabinet
RθJC is the junction-to-case thermal resistance
Rθint is the adhesive or interface material thermal resistance
Rθsa is the heat sink base-to-ambient thermal resistance
Pd is the power dissipated by the device
During operation, the die-junction temperatures (Tj) should be maintained less than the value specified in
Table 4. The temperature of air cooling the component greatly depends on the ambient inlet air temperature
and the air temperature rise within the electronic cabinet. An electronic cabinet inlet-air temperature (Ta)
may range from 30° to 40°C. The air temperature rise within a cabinet (Tr) may be in the range of 5° to
10°C. The thermal resistance of the thermal interface material (Rθint) is typically about 1.5°C/W. For
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