MC54/74HC573A
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
2
Functional operation should be restricted to the Recommended Operating Conditions.
Derating — Plastic DIP: –10 mW/ C from 65 to 125 C
Ceramic DIP: –10 mW/ C from 100 to 125 C
SOIC Package: –7 mW/ C from 65 to 125 C
TSSOP Package: –6.1 mW/
°
C from 65 to 125 C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Tstg
TL
Storage Temperature
– 65 to + 150
TSSOP Package
500
450
C
mW
Lead Temperature, 1 mm from Case for 10 Seconds
(Ceramic DIP)
300
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
Vin, Vout
TA
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
2.0
0
– 55
0
6.0
VCC
+ 125
400
V
V
C
Input Rise and Fall Time
(Figure 1)
VCC = 4.5 V
0
1000
500
ns
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Symbol
b l
Parameter
Test Conditions
di i
V
25 C
1.5
3.15
4.2
4.2
– 55 to
U i
Voltage
|Iout|
20
μ
A
2.0
6.0
3.98
5.48
3.15
125 C
3.15
4.2
Voltage
|Iout|
20
μ
A
1.35
VIL
Maximum Low–Level Input
Voltage
4.5
6.0
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20
μ
A
2.0
4.5
4.4
0.5
4.4
0.5
1.35
0.5
1.35
V
Minimum High–Level Output
4.5
6.0
Vin = VIH or VIL
3.7
5.2
4.4
V
Vin = VIH or VIL
≤
2.4mA
|I|Iout|
|Iout|
6.0 mA
7.8 mA
3.84
5.34
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
(Vin or Vout)
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
VCC.