參數(shù)資料
型號： MC8641DVU1250JB
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： MICROPROCESSOR, CBGA1023
封裝： 33 X 33 MM, ROHS COMPLIANT, CERAMIC, BGA-1023
文件頁數(shù)： 25/140頁
文件大?。?/td> 1484K
代理商： MC8641DVU1250JB
MPC8641 and MPC8641D Integrated Host Processor Hardware Specifications, Rev. 0
120
Freescale Semiconductor
Thermal
heat flux of adjacent components), heat sink efficiency, heat sink placement, next-level interconnect
technology, system air temperature rise, altitude, and so on.
Due to the complexity and variety of system-level boundary conditions for today's microelectronic
equipment, the combined effects of the heat transfer mechanisms (radiation, convection, and conduction)
may vary widely. For these reasons, we recommend using conjugate heat transfer models for the board as
well as system-level designs.
For system thermal modeling, the MPC8641 thermal model is shown in Figure 62. Four cuboids are used
to represent this device. The die is modeled as 12.4x15.3 mm at a thickness of 0.86 mm. See Section 3,
“Power Characteristics” for power dissipation details. The substrate is modeled as a single block
33x33x1.2 mm with orthotropic conductivity: 13.5 W/(m K) in the xy-plane and 5.3 W/(m K) in the
z-direction. The die is centered on the substrate. The bump/underfill layer is modeled as a collapsed
thermal resistance between the die and substrate with a conductivity of 5.3 W/(m K) in the thickness
dimension of 0.07 mm. Because the bump/underfill is modeled with zero physical dimension (collapsed
height), the die thickness was slightly enlarged to provide the correct height. The C5 solder layer is
modeled as a cuboid with dimensions 33x33x0.4 mm and orthotropic thermal conductivity of 0.034 W/(m
K) in the xy-plane and 9.6 W/(m K) in the z-direction. An LGA solder layer would be modeled as a
collapsed thermal resistance with thermal conductivity of 9.6W/(m K) and an effective height of 0.1 mm.
The thermal model uses approximate dimensions to reduce grid. Please refer to the case outline for actual
dimensions.
Figure 62. Recommended Thermal Model of MPC8641
Bump and Underfill
Die
Substrate
C5 solder layer
Die
Substrate
Side View of Model (Not to Scale)
Top View of Model (Not to Scale)
x
y
z
Conductivity
Value
Unit
Die (12.4x15.3x0.86 mm)
Silicon
Temperature
dependent
Bump and Underfill (12.4
× 15.3 × 0.07 mm)
Collapsed Resistance
kz
5.3
W/(m K)
Substrate (33
× 33 × 1.2 mm)
kx
13.5
W/(m K)
ky
13.5
kz
5.3
C5 Solder layer (33
× 33 × 0.4 mm)
kx
0.034
W/(m K)
ky
0.034
kz
9.6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC8641DVU1250K 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications
MC8641DVU1250N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications
MC8641DVU1333CJE 制造商:Freescale Semiconductor 功能描述:G8,REV3,0.95V,105C - Trays
MC8641DVU1333G 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications
MC8641DVU1333H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications
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