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參數(shù)資料
| 型號： | MC9RS08KB2CSC |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | MICROCONTROLLER, PDSO8 |
| 封裝： | ROHS COMPLIANT, MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 25/48頁 |
| 文件大?。?/td> | 847K |
| 代理商： | MC9RS08KB2CSC |
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Electrical Characteristics
MC9RS08KB12 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
31
Figure 34. Example VPP Filtering
Table 16. Flash Characteristics
No.
C
Characteristic
Symbol
Min
Typical1
1 Typicals are measured at 25
°C.
Max
Unit
1
D
Supply voltage for program/erase
VDD
2.7
—
5.5
V
2
D
Program/Erase voltage
VPP
11.8
12
12.2
V
3C
VPP current
Program
Mass erase
IVPP_prog
IVPP_erase
—
200
100
μA
4D
Supply voltage for read operation
0 < fBus < 10 MHz
VRead
1.8
—
5.5
V
5
P
Byte program time
tprog
20
—
40
μs
6
P
Mass erase time
tme
500
—
ms
7
C
Cumulative program HV time2
2 t
hv is the cumulative high voltage programming time to the same row before next erase. Same address can not be
programmed more than twice before next erase.
thv
——
8
ms
8C
Total cumulative HV time
(total of tme & thv applied to device)
thv_total
—
2
hours
9
D
HVEN to program setup time
tpgs
10
—
μs
10
D
PGM/MASS to HVEN setup time
tnvs
5—
—
μs
11
D
HVEN hold time for PGM
tnvh
5—
—
μs
12
D
HVEN hold time for MASS
tnvh1
100
—
μs
13
D
VPP to PGM/MASS setup time
tvps
20
—
ns
14
D
HVEN to VPP hold time
tvph
20
—
ns
15
D
VPP rise time
3
3 Fast V
PP rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
and cause permanent damage to the pad. External filtering for the VPP power source is recommended. An example VPP
filter is shown in Figure 34.
tvrs
200
—
ns
16
D
Recovery time
trcv
1—
—
μs
17
D
Program/erase endurance
TL to TH = –40
°C to 85 °C
—
1000
—
cycles
18
C
Data retention
t
D_ret
15
—
years
100 Ω
VPP
12 V
1 nF
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