Electrical Characteristics
MC9RS08KB12 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
9
3.6
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table 6. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
±2000
—
V
2
Charge device model (CDM)
VCDM
±500
—
V
3
Latch-up current at TA = 85 °C
ILAT
±100
—
mA
Table 7. DC Characteristics (Temperature Range = –40 to 85
°C Ambient)
No.
C
Parameter
Symbol
Min
Typical
Max
Unit
1—
Supply voltage (run, wait and stop modes.)
0 < fBus <10 MHz
V
DD
1.8
—
5.5
V
2C
Minimum RAM retention supply voltage applied to
VDD
VRAM
0.81
——
V
3P
Low-voltage detection threshold
(VDD falling)
(VDD rising)
VLVD
1.80
1.88
1.86
1.94
1.95
2.05
V
4
C
Power on RESET (POR) voltage
VPOR
1
0.9
—
1.7
V
5
C
Input high voltage (VDD > 2.3V) (all digital inputs)
VIH
0.70
× V
DD
——
V
6C
Input high voltage (1.8 V
≤ V
DD ≤ 2.3 V) (all digital
inputs)
VIH
0.85
× V
DD
——
V
7
C
Input low voltage (VDD > 2.3 V) (all digital inputs)
VIL
—
0.30
× V
DD
V
8C
Input low voltage (1.8 V
≤ V
DD ≤ 2.3 V)
(all digital inputs)
VIL
—
0.30
× V
DD
V
9
C
Input hysteresis (all digital inputs)
Vhys
1
0.06
× V
DD
——
V
10
P
Input leakage current (per pin)
VIn = VDD or VSS, all input only pins
|IIn|
—
0.025
1.0
μA
11
P
High impedance (off-state) leakage current (per
pin)
VIn = VDD or VSS, all input/output
|IOZ|
—
0.025
1.0
μA
12
P
Internal pullup resistors2(all port pins)
RPU
20
45
65
k
Ω
13
P
Internal pulldown resistors2(all port pins)
RPD
20
45
65
k
Ω
14
C
Output high voltage — Low drive (PTxDSn = 0)
5 V, ILoad = 2 mA
3 V, ILoad = 1 mA
1.8 V, ILoad = 0.5 mA
VOH
VDD – 0.8
—
V
Output high voltage — High drive (PTxDSn = 1)
5 V, ILoad = 5 mA
3 V, ILoad = 3 mA
1.8 V, ILoad = 2 mA
VDD – 0.8
—
15
C
Maximum total IOH for all port pins
|IOHT|—
—
40
mA