參數(shù)資料
型號(hào)： MC9S08QE64CLH
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PQFP64
封裝： 10 X 10 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, MS-026BCD, LQFP-64
文件頁(yè)數(shù)： 27/50頁(yè)
文件大?。?/td> 1131K
代理商： MC9S08QE64CLH
Electrical Characteristics
MC9S08QE128 Series Data Sheet, Rev. 7
Freescale Semiconductor
33
3.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section of the MC9S08QE128 Reference Manual.
Table 19. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
-40
°C to 85°CVprog/erase
1.8
3.6
V
D
Supply voltage for read operation
VRead
1.8
3.6
V
D
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
56.67
μs
P
Byte program time (random location)(2)
tprog
9tFcyc
P
Byte program time (burst mode)(2)
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time(2)
tMass
20,000
tFcyc
Byte program current3
3 The program and erase currents are additional to the standard run IDD. These values are measured at room temperatures
with VDD = 3.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40°C to + 85°C
T = 25
°C
4 Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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