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| 型號(hào)： | MCC200-16IO1 |
| 廠商： | IXYS CORP |
| 元件分類： | 晶閘管 |
| 中文描述： | 340 A, 1600 V, SCR |
| 封裝： | MODULE-7 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | MCC200-16IO1 |
2004 IXYS All rights reserved
2 - 3
MCC 200
MCD 200
IXYS reserves the right to change limits, test conditions and dimensions
448
6
5
4
3
1
I
G
t
gd
V
G
I
G
10-3
10-2
10-1
100
101
102
0.1
1
10
1
10
100
2
0.01
0.1
1
10
A
I
GD
, TVJ = 130°C
A
V
T, VF
I
T, IF
0.00.4
0.81.2
1.62.0
0
100
200
300
400
500
V
A
T
VJ = 25°C
T
VJ = 125°C
3: I
GT, TVJ = -40°C
2: I
GT, TVJ =
25°C
1: I
GT
, TVJ = 125°C
4: P
GM =
20 W
5: P
GM =
60 W
6: P
GM = 120 W
s
typ.
limit
T
VJ = 25°C
Symbol
Conditions
Characteristic Values
I
RRM, IDRM
T
VJ = TVJM; VR = VRRM; VD = VDRM
15
mA
V
T / VF
I
T, IF = 200 A; TVJ = 25°C
1.20
V
V
T0
For power-loss calculations only (T
VJ = 125°C)
0.8
V
r
T
1.0
m
V
GT
V
D = 6 V;
T
VJ =
25°C
2
V
T
VJ = -40°C
3
V
I
GT
V
D = 6 V;
T
VJ =
25°C
150
mA
T
VJ = -40°C
220
mA
V
GD
T
VJ = TVJM;VD =
2/
3 VDRM
0.25
V
I
GD
10
mA
I
L
T
VJ = 25°C; tP = 30 s; VD = 6 V
200
mA
I
G = 0.5 A; diG/dt = 0.5 A/s
I
H
T
VJ = 25°C; VD = 6 V; RGK =
∞
150
mA
t
gd
T
VJ = 25°C; VD = VDRM
2s
I
G = 0.5 A; diG/dt = 0.5 A/s
t
q
T
VJ = TVJM; IT = 300 A, tP = 200 s; -di/dt = 10 A/s
typ.
200
s
V
R = 100 V; dv/dt = 50 V/s; VD =
2/
3 VDRM
Q
S
T
VJ = TVJM; IT = 300 A, -di/dt = 50 A/s
550
C
I
RM
235
A
R
thJC
per thyristor; DC current
0.13
K/W
per module
0.065
K/W
R
thJH
per thyristor; DC current
0.18
K/W
per module
0.09
K/W
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s2
Dimensions in mm
(1 mm = 0.0394")
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L
(L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180R
(R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Fig. 3 Forward current versus
voltage drop
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