參數(shù)資料
型號(hào): MCC200-16IO1
廠商: IXYS CORP
元件分類(lèi): 晶閘管
中文描述: 340 A, 1600 V, SCR
封裝: MODULE-7
文件頁(yè)數(shù): 3/3頁(yè)
文件大?。?/td> 77K
代理商: MCC200-16IO1
2004 IXYS All rights reserved
3 - 3
MCC 200
MCD 200
IXYS reserves the right to change limits, test conditions and dimensions
448
I2dt
T
C
t
110
104
105
106
A2s
0
25
50
75
100
125
150
0
100
200
300
400
I
TSM
I
FSM
A
C
I
TAVM
I
FAVM
s
T
VJ = 45°C
ms
t
s
t
Z
thJC
K/W
T
VJ = 125°C
0.001
0.01
0.1
1
0
2000
4000
6000
8000
80 % V
RRM
T
VJ = 45°C
50 Hz
T
VJ = 125°C
180° sin
120°
60°
30°
DC
10-3
10-2
10-1
100
101
102
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
25
50
75
100
125
150
0
200
400
600
0
300
600
900
1200
1500
1800
2100
W
P
tot
A
I
dAVM
T
A
C
0
25
50
75
100
125
150
0
100
200
300
0
100
200
300
400
W
P
tot
A
I
TRMS/IFRMS
T
A
C
R
thKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
180° sin
120°
60°
30°
DC
Circuit
B6
0.03
0.04
0.06
0.08
0.1
0.15
0.2
R
thKA K/W
120°
180°
DC
60°
30°
Fig. 7
Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
Fig. 4 Surge overload current
I
TSM / FSM: Crest value, t: duration
Fig. 5
Ι2dt versus time (1-10 ms)
Fig. 6
Maximum forward current
at case temperature
Fig. 9 Transient thermal impedance junction to case at various condition angles (per thyristor or diode)
Constants for Z
thJC calculation (DC):
iR
thi (K/W)
t
i (s)
1
0.01
0.00014
2
0.0065
0.019
3
0.025
0.18
4
0.0615
0.52
5
0.027
1.6
Fig. 8
3
~ rectifier bridge: Power dissipation versus
direct output current and ambient temperature
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