參數(shù)資料
型號(hào)： MCF51QH64VHS
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： FLASH, 50 MHz, MICROCONTROLLER, QCC44
封裝： 5 X 5 MM, QFN-44
文件頁數(shù)： 21/72頁
文件大?。?/td> 1031K
代理商： MCF51QH64VHS
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 19. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
6.4.1.4 Reliability specifications
Table 20. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretp100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycp
Cycling endurance
10 K
TBD
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretd1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretd100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycd
Cycling endurance
10 K
TBD
—
cycles
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
TBD
—
years
tnvmretee10 Data retention up to 10% of write endurance
10
TBD
—
years
tnvmretee1 Data retention up to 1% of write endurance
15
TBD
—
years
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree8k
Write endurance
EEPROM backup to FlexRAM ratio = 16
EEPROM backup to FlexRAM ratio = 128
EEPROM backup to FlexRAM ratio = 512
EEPROM backup to FlexRAM ratio = 4096
EEPROM backup to FlexRAM ratio = 8192
35 K
315 K
1.27 M
10 M
20 M
TBD
—
writes
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
Memories and memory interfaces
MCF51JF128 Advance Information Data Sheet, Rev. 3, 08/2011.
28
Preliminary
Freescale Semiconductor, Inc.
相關(guān)PDF資料
PDF描述
MB95F563HPFT-G-JNE2 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PDSO20
MB95F563HWQN-G-JNERE1 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PQCC32
MB95F563KPFT-G-JNE2 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PDSO20
MSP430G2152IN20 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PDIP20
MSP430G2152IPW14 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PDSO14
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCF51QH64VLF 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C
MCF51QM128 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCF51QM128
MCF51QM128_12 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCF51QM128
MCF51QM128VHS 功能描述:32位微控制器 - MCU ColdFireV1,128KFlash RoHS:否 制造商:Texas Instruments 核心:C28x 處理器系列:TMS320F28x 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:90 MHz 程序存儲(chǔ)器大小:64 KB 數(shù)據(jù) RAM 大小:26 KB 片上 ADC:Yes 工作電源電壓:2.97 V to 3.63 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:LQFP-80 安裝風(fēng)格:SMD/SMT
MCF51QM128VHSR 功能描述:16位微控制器 - MCU ColdFireV1,128KFlash RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
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