- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄201872 > MCF51QH64VHS (FREESCALE SEMICONDUCTOR INC) FLASH, 50 MHz, MICROCONTROLLER, QCC44 PDF資料下載
參數(shù)資料
| 型號(hào)： | MCF51QH64VHS |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | FLASH, 50 MHz, MICROCONTROLLER, QCC44 |
| 封裝： | 5 X 5 MM, QFN-44 |
| 文件頁(yè)數(shù)： | 22/72頁(yè) |
| 文件大小： | 1031K |
| 代理商： | MCF51QH64VHS |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)當(dāng)前第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum value assumes all
byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_FlexRAM =
× Write_efficiency × n
EEPROM – 2 × EEESIZE
EEESIZE
nvmcycd
where
Writes_FlexRAM — minimum number of writes to each FlexRAM location
EEPROM — allocated FlexNVM based on DEPART; entered with Program
Partition command
EEESIZE — allocated FlexRAM based on DEPART; entered with Program Partition
command
Write_efficiency —
0.25 for 8-bit writes to FlexRAM
0.50 for 16-bit or 32-bit writes to FlexRAM
nnvmcycd — data flash cycling endurance
Memories and memory interfaces
MCF51JF128 Advance Information Data Sheet, Rev. 3, 08/2011.
Freescale Semiconductor, Inc.
Preliminary
29
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB95F563HPFT-G-JNE2 | 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PDSO20 |
| MB95F563HWQN-G-JNERE1 | 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PQCC32 |
| MB95F563KPFT-G-JNE2 | 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PDSO20 |
| MSP430G2152IN20 | 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PDIP20 |
| MSP430G2152IPW14 | 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PDSO14 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCF51QH64VLF | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
| MCF51QM128 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCF51QM128 |
| MCF51QM128_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCF51QM128 |
| MCF51QM128VHS | 功能描述:32位微控制器 - MCU ColdFireV1,128KFlash RoHS:否 制造商:Texas Instruments 核心:C28x 處理器系列:TMS320F28x 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:90 MHz 程序存儲(chǔ)器大小:64 KB 數(shù)據(jù) RAM 大小:26 KB 片上 ADC:Yes 工作電源電壓:2.97 V to 3.63 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:LQFP-80 安裝風(fēng)格:SMD/SMT |
| MCF51QM128VHSR | 功能描述:16位微控制器 - MCU ColdFireV1,128KFlash RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。