MCF5208 ColdFire Microprocessor Data Sheet, Rev. 3 Fr" />
參數(shù)資料
型號: MCF5207CVM166
廠商: Freescale Semiconductor
文件頁數(shù): 11/46頁
文件大小: 0K
描述: IC MCU 32BIT RISC 144-MAPBGA
標(biāo)準(zhǔn)包裝: 160
系列: MCF520x
核心處理器: Coldfire V2
芯體尺寸: 32-位
速度: 166.67MHz
連通性: EBI/EMI,I²C,SPI,UART/USART
外圍設(shè)備: DMA,WDT
輸入/輸出數(shù): 30
程序存儲器類型: ROMless
RAM 容量: 16K x 8
電壓 - 電源 (Vcc/Vdd): 1.4 V ~ 3.6 V
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 144-LBGA
包裝: 托盤
Electrical Characteristics
MCF5208 ColdFire Microprocessor Data Sheet, Rev. 3
Freescale Semiconductor
19
The average chip-junction temperature (TJ) in °C can be obtained from:
Eqn. 1
Where:
TA
= Ambient Temperature,
°C
QJMA
= Package Thermal Resistance, Junction-to-Ambient, ×C/W
PD
=PINT + PI/O
PINT
=IDD × IVDD, Watts - Chip Internal Power
PI/O
= Power Dissipation on Input and Output Pins — User Determined
For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if
PI/O is neglected) is:
Eqn. 2
Solving equations 1 and 2 for K gives:
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
5.3
ESD Protection
3 Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board temperature is
measured on the top surface of the board near the package.
4 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method
1012.1).
5 Thermal characterization parameter indicating the temperature difference between package top and the junction temperature
per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written in conformance
with Psi-JT.
6 Thermal characterization parameter indicating the temperature difference between package top and the junction temperature
per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written in conformance
with Psi-JT.
7 Thermal characterization parameter indicating the temperature difference between package top and the junction temperature
per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written in conformance
with Psi-JT.
Table 6. ESD Protection Characteristics1, 2
NOTES:
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
Characteristics
Symbol
Value
Unit
ESD Target for Human Body Model
HBM
2000
V
T
J
T
A
P
D
Θ
JMA
×
()
+
=
P
D
K
T
J
273
°C
+
()
---------------------------------
=
KP
D
T
A
273
°C
×
() Q
JMA
P
D
2
×
+
×
=
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