參數(shù)資料
型號: MCF52221
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Microcontroller Data Sheet
中文描述: 微控制器數(shù)據(jù)表
文件頁數(shù): 31/56頁
文件大小: 811K
代理商: MCF52221
Preliminary Electrical Characteristics
MCF52223 ColdFire Microcontroller Data Sheet, Rev. 1
Preliminary
Freescale Semiconductor
31
64 QFN
Junction to ambient, natural convection
Single layer board (1s)
θ
JA
θ
JA
θ
JMA
θ
JMA
θ
JB
θ
JC
Ψ
jt
68
1,2
°
C / W
Junction to ambient, natural convection
Four layer board (2s2p)
24
1,3
°
C / W
Junction to ambient (@200 ft/min)
Single layer board (1s)
55
1,3
°
C / W
Junction to ambient (@200 ft/min)
Four layer board (2s2p)
19
1,3
°
C / W
Junction to board
8
4
°
C / W
Junction to case (bottom)
0.6
5
°
C / W
Junction to top of package
Natural convection
3
6
°
C / W
Maximum operating junction temperature
T
j
105
o
C
NOTES:
1
θ
JA
and
Ψ
jt
parameters are simulated in conformance with EIA/JESD Standard 51-2 for natural convection. Freescale
recommends the use of
θ
JA
and power dissipation specifications in the system design to prevent device junction
temperatures from exceeding the rated specification. System designers should be aware that device junction
temperatures can be significantly influenced by board layout and surrounding devices. Conformance to the device
junction temperature specification can be verified by physical measurement in the customer’s system using the
Ψ
jt
parameter, the device power dissipation, and the method described in EIA/JESD Standard 51-2.
2
Per JEDEC JESD51-2 with the single-layer board (JESD51-3) horizontal.
3
Per JEDEC JESD51-6 with the board JESD51-7) horizontal.
4
Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
5
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
6
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is
written in conformance with Psi-JT.
The average chip-junction temperature (T
J
) in
°
C can be obtained from:
(1)
Where:
T
A
Θ
JA
P
D
P
INT
P
I/O
= Ambient Temperature,
°
C
= Package Thermal Resistance, Junction-to-Ambient,
°
C/W
= P
INT
+
P
I/O
= I
DD
×
V
DD
, Watts - Chip Internal Power
= Power Dissipation on Input and Output Pins — User Determined
For most applications P
I/O
<
P
INT
and can be ignored. An approximate relationship between P
D
and T
J
(if P
I/O
is neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = P
D
×
(T
A
+ 273
°
C) +
Θ
JMA
×
P
D 2
(3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
D
(at equilibrium)
for a known T
A
. Using this value of K, the values of P
D
and T
J
can be obtained by solving equations (1) and (2) iteratively for
any value of T
A
.
Table 20. Thermal Characteristics (continued)
Characteristic
Symbol
Value
Unit
T
J
T
A
P
D
Θ
JMA
×
(
)
+
=
P
D
K
T
J
273
°
C
+
(
)
÷
=
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