參數(shù)資料
型號(hào): MCF52221
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: Microcontroller Data Sheet
中文描述: 微控制器數(shù)據(jù)表
文件頁(yè)數(shù): 32/56頁(yè)
文件大?。?/td> 811K
代理商: MCF52221
MCF52223 ColdFire Microcontroller Data Sheet, Rev. 1
Preliminary
Preliminary Electrical Characteristics
Freescale Semiconductor
32
2.4
Flash Memory Characteristics
The Flash memory characteristics are shown in
Table 21
and
Table 22
.
2.5
ESD Protection
Table 21. SGFM Flash Program and Erase Characteristics
(V
DDF
= 2.7 to 3.6 V)
Parameter
Symbol
Min
Typ
Max
Unit
System clock (read only)
f
sys(R)
0
80
MHz
System clock (program/erase)
1
NOTES:
1
Refer to the Flash section for more information
f
sys(P/E)
0.15
80
MHz
Table 22. SGFM Flash Module Life Characteristics
(V
DDF
= 2.7 to 3.6 V)
Parameter
Symbol
Value
Unit
Maximum number of guaranteed program/erase cycles
1
before failure
NOTES:
1
A program/erase cycle is defined as switching the bits from 1
0
1.
2
Reprogramming of a Flash array block prior to erase is not required.
P/E
10,000
2
Cycles
Data retention at average operating temperature of 85
°
C
Retention
10
Years
Table 23. ESD Protection Characteristics
1,
2
NOTES:
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer meets
the device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD Target for Human Body Model
ESD Target for Machine Model
HBM Circuit Description
HBM
MM
R
series
C
R
series
C
2000
200
1500
100
0
200
V
V
ohms
pF
ohms
pF
MM Circuit Description
Number of pulses per pin (HBM)
positive pulses
negative pulses
Number of pulses per pin (MM)
positive pulses
negative pulses
Interval of Pulses
1
1
3
3
1
sec
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