參數(shù)資料
型號: MCIMX31DVMN5D
廠商: Freescale Semiconductor
文件頁數(shù): 33/118頁
文件大小: 0K
描述: IC MPU I.MX31 CONSUMR 473MAPBGA
標準包裝: 84
系列: i.MX31
核心處理器: ARM11
芯體尺寸: 32-位
速度: 532MHz
連通性: 1 線,ATA,EBI/EMI,F(xiàn)IR,I²C,MMC/SD,PCMCIA,SIM,SPI,SSI,UART/USART,USB,USB OTG
外圍設備: DMA,LCD,POR,PWM,WDT
程序存儲器類型: ROMless
RAM 容量: 16K x 8
電壓 - 電源 (Vcc/Vdd): 1.22 V ~ 3.3 V
振蕩器型: 外部
工作溫度: 0°C ~ 70°C
封裝/外殼: 473-LFBGA
包裝: 托盤
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.3
Freescale Semiconductor
21
The MCIMX31 I/O parameters appear in Table 15 for DDR (Double Data Rate). See Table 8, "Operating
Ranges," on page 13 for temperature and supply voltage ranges.
NOTE
NVCC for Table 15 refers to NVCC2, NVCC21, and NVCC22.
Low-level output current, fast slew rate
IOL_F
VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
4
6
8
——
mA
High-Level DC input voltage
VIH
0.7*NVCC
NVCC
V
Low-Level DC input voltage
VIL
—0
0.3*QVCC
V
Input Hysteresis
VHYS
Hysteresis enabled
0.25
V
Schmitt trigger VT+
VT +
Hysteresis enabled
0.5*QVCC
V
Schmitt trigger VT–
VT
Hysteresis enabled
0.5*QVCC
V
Pull-up resistor (100 k
Ω PU)
RPU
100
k
Ω
Pull-down resistor (100 k
Ω PD)
RPD
100
Input current (no PU/PD)
IIN
VI = NVCC or GND
±1
μA
Input current (100 k
Ω PU)
IIN
VI = 0
VI = NVCC
——
25
0.1
μA
Input current (100 k
Ω PD)
IIN
VI = 0
VI = NVCC
——
0.25
28
μA
Tri-state leakage current
IOZ
VI = NVCC or GND
I/O = High Z
——
±2
μA
Table 15. DDR (Double Data Rate) I/O DC Electrical Parameters
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
High-level output voltage
VOH
IOH = –1 mA
NVCC –0.12
V
IOH = specified Drive
0.8*NVCC
V
Low-level output voltage
VOL
IOL = 1 mA
0.08
V
IOL = specified Drive
0.2*NVCC
V
High-level output current
IOH
VOH=0.8*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
–3.6
–7.2
–10.8
–14.4
——
mA
Low-level output current
IOL
VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
3.6
7.2
10.8
14.4
——
mA
Table 14. GPIO DC Electrical Parameters (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
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