參數(shù)資料
型號(hào): MCM6343YJ15
廠商: MOTOROLA INC
元件分類(lèi): SRAM
英文描述: 256K x 15 Bit 3.3 V Asynchronous Fast Static RAM
中文描述: 256K X 16 STANDARD SRAM, 15 ns, PDSO44
封裝: 0.400 INCH, SOJ-44
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 169K
代理商: MCM6343YJ15
MCM6343
3
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V
±
0.3 V, TA = 0 to 70
°
C, Unless Otherwise Noted)
(TA = – 40 to + 85
°
C for Industrial Temperature Offering)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Power Supply Voltage
VDD
VIH
3.0
3.3
3.6
V
Input High Voltage
2.2
VDD + 0.3
**
V
Input Low Voltage
VIL
– 0.5
*
0.8
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
20 ns) for I
20.0 mA.
**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width
20 ns) for I
20.0 mA.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Output Leakage Current (E = VIH, Vout = 0 to VDD)
Output Low Voltage
Ilkg(I)
Ilkg(O)
VOL
±
1.0
μ
A
±
1.0
μ
A
(IOL = + 4.0 mA)
(IOL = + 100
μ
A)
0.4
VSS + 0.2
V
Output High Voltage
(IOH = – 4.0 mA)
(IOH = – 100
μ
A)
VOH
2.4
VDD – 0.2
V
POWER SUPPLY CURRENTS
Parameter
Symbol
0 to 70
°
C
– 40 to
+ 85
°
C
Unit
AC Active Supply Current
(Iout = 0 mA, VCC = max)
MCM6343–12: tAVAV = 12 ns
MCM6343–15: tAVAV = 15 ns
ICC
240
230
240
mA
AC Standby Current (VCC = max, E = VIH,
No other restrictions on other inputs)
MCM6343–12: tAVAV = 12 ns
MCM6343–15: tAVAV = 15 ns
ISB1
50
45
55
50
mA
CMOS Standby Current (E
VCC – 0.2 V, Vin
VSS + 0.2 V or
VCC – 0.2 V)
(VCC = max, f = 0 MHz)
ISB2
5
5
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Address Input Capacitance
Cin
Cin
CI/O
6
pF
Control Input Capacitance
6
pF
Input/Output Capacitance
8
pF
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