參數(shù)資料
型號: MCM63P818ZP66R
廠商: MOTOROLA INC
元件分類: DRAM
英文描述: 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
中文描述: 256K X 18 CACHE SRAM, 7 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 24/27頁
文件大?。?/td> 328K
代理商: MCM63P818ZP66R
MCM63P636
24
MOTOROLA FAST SRAM
STANDARD AND DEVICE SPECIFIC (PUBLIC) INSTRUCTION CODES
Instruction
Code*
Description
IDCODE
001**
Preloads ID register and places it between TDI and TDO. Does not affect RAM operation.
HIGH–Z
010
Captures I/O ring contents. Places the bypass register between TDI and TDO. Forces all DQ pins
to High–Z.
NOT IEEE 1149.1 COMPLIANT.
BYPASS
011
Places bypass register between TDI and TDO. Does not affect RAM operation.
NOT IEEE 1149.1
COMPLIANT.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not
affect RAM operation.
Does not implement IEEE 1149.1 Preload function.
NOT IEEE 1149.1 COMPLIANT.
*Instruction codes expressed in binary, MSB on left, LSB on right.
**Default instruction automatically loaded when TRST asserted or in test–logic–reset state.
STANDARD (PRIVATE) INSTRUCTION CODES
Instruction
Code*
Description
NO OP
000
Do not use these instructions; they are reserved for future use.
NO OP
101
Do not use these instructions; they are reserved for future use.
NO OP
110
Do not use these instructions; they are reserved for future use.
NO OP
111
Do not use these instructions; they are reserved for future use.
* Instruction codes expressed in binary, MSB on left, LSB on right.
CAPTURE–DR
EXIT1–DR
EXIT2–DR
UPDATE–DR
CAPTURE–IR
EXIT1–IR
EXIT2–IR
UPDATE–IR
SHIFT–IR
PAUSE–IR
SHIFT–DR
PAUSE–DR
TEST–LOGIC
RESET
RUN–TEST/
IDLE
SELECT
DR–SCAN
SELECT
IR–SCAN
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
NOTE: The value adjacent to each state transition represents the signal present at TMS at the rising edge of TCK.
0
Figure 10. TAP Controller State Diagram
相關(guān)PDF資料
PDF描述
MCM63Z819TQ15R 128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
MCM63P531TQ9R 32K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P736TQ100 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P531 32K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63P531TQ7 Replaced by PTH12000W :
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCM63P837 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM63R836 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCM63R836
MCM63R836A 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:8M Late Write HSTL
MCM63R836FC3.0 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCM63R836
MCM63R836FC3.0R 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCM63R836