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參數(shù)資料
| 型號(hào)： | MCM6729DWJ12 |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 256K x 4 Bit Fast Static Random Access Memory |
| 中文描述： | 256K X 4 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-32 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | MCM6729DWJ12 |
MCM6729D
3
MOTOROLA FAST SRAM
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Address Input Capacitance
Cin
Cin
CI/O
—
6
pF
Control Pin Input Capacitance
—
6
pF
Input/Output Capacitance
—
8
pF
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to +70
°
C, Unless Otherwise Noted)
Input Timing Measurement Reference Level
Input Pulse Levels
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . . . .
0 to 3.0 V
2 ns
Output Timing Measurement Reference Level
Output Load
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 V
. . . . . . . . . . . . .
See Figure 1a
READ CYCLE TIMING
(See Notes 1 and 2)
6729D–8
6729D–10
6729D–12
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Read Cycle Time
tAVAV
tAVQV
tELQV
tGLQV
tAXQX
tELQX
tGLQX
tEHQZ
tGHQZ
8
—
10
—
12
—
ns
3
Address Access Time
—
8
—
10
—
12
ns
Enable Access Time
—
8
—
10
—
12
ns
Output Enable Access Time
—
4
—
5
—
6
ns
Output Hold from Address Change
3
—
3
—
3
—
ns
Enable Low to Output Active
3
—
3
—
3
—
ns
4,5,6
Output Enable Low to Output Active
0
—
0
—
0
—
ns
4,5,6
Enable High to Output High–Z
—
4
—
5
—
6
ns
4,5,6
Output Enable High to Output High–Z
—
4
—
5
—
6
ns
4,5,6
NOTES:
1. W is high for read cycle.
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All read cycle timings are referenced from the last valid address to the first transitioning address.
4. At any given voltage and temperature, tEHQZ (max) < tELQX (min), and tGHQZ (max) < tGLQX (min), both for a given device and from
device to device.
5. Transition is measured 200 mV from steady–state voltage with load of Figure 1b.
6. This parameter is sampled and not 100% tested.
7. Device is continuously selected (E = VIL, G = VIL).
8. Addresses valid prior to or coincident with E going low.
OUTPUT
Z0 = 50
RL = 50
VL = 1.5 V
(a)
(b)
5 pF
+5 V
OUTPUT
255
480
The table of timing values shows either a
minimum or a maximum limit for each param-
eter. Input requirements are specified from
the external system point of view. Thus, ad-
dress setup time is shown as a minimum
since the system must supply at least that
much time. On the other hand, responses
from the memory are specified from the de-
vice point of view. Thus, the access time is
shown as a maximum since the device never
provides data later than that time.
TIMING LIMITS
Figure 1. AC Test Loads
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