MCP1603
DS22042A-page 4
2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
V
IN
- GND.......................................................................+6.0V
All Other I/O ...............................(GND - 0.3V) to (V
IN
+ 0.3V)
L
X
to GND .............................................. -0.3V to (V
IN
+ 0.3V)
Output Short Circuit Current..................................Continuous
Power Dissipation
(Note 5)
..........................Internally Limited
Storage Temperature.....................................-65°C to +150°C
Ambient Temp. with Power Applied.................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM..............................................................................4 kV
MM...............................................................................300V
DC CHARACTERISTICS
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Electrical Characteristics:
Unless otherwise indicated, V
IN
= SHDN = 3.6V, C
OUT
= C
IN
= 4.7 μF, L = 4.7 μH, V
OUT
(ADJ) = 1.8V,
I
OUT
= 100 mA, T
A
= +25°C.
Boldface
specifications apply over the T
A
range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Input Voltage
Maximum Output Current
Shutdown Current
Quiescent Current
Shutdown/UVLO/Thermal Shutdown Characteristics
SHDN, Logic Input Voltage Low
SHDN, Logic Input Voltage High
SHDN, Input Leakage Current
Undervoltage Lockout
Undervoltage Lockout Hysteresis UVLO
HYS
Thermal Shutdown
Thermal Shutdown Hysteresis
Note 1:
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
OUT
+ 0.5V.
2:
Reference Feedback Voltage Tolerance applies to adjustable output voltage setting.
3:
V
R
is the output voltage setting.
4:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum
allowable power dissipation causes the device to initiate thermal shutdown.
5:
The internal MOSFET switches have an integral diode from the L
X
pin to the V
IN
pin, and from the L
X
pin
to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits
must be adhered to. Thermal protection is not able to limit the junction temperature for these cases.
6:
The current limit threshold is a cycle-by-cycle peak current limit.
V
IN
I
OUT
I
IN_SHDN
I
Q
2.7
500
—
—
—
—
0.1
45
5.5
—
1
60
V
Note 1
Note 1
SHDN = GND
SHDN = V
IN
, I
OUT
= 0 mA
mA
μA
μA
V
IL
V
IH
—
45
-1.0
2.12
—
—
—
—
—
±0.1
2.28
140
150
10
15
—
1.0
2.43
—
—
—
%V
IN
%V
IN
μA
V
mV
°C
°C
V
IN
= 2.7V to 5.5V
V
IN
= 2.7V to 5.5V
V
IN
= 2.7V to 5.5V
V
IN
Falling
I
L_SHDN
UVLO
T
SHD
T
SHD-HYS
Note 4
,
Note 5
Note 4
,
Note 5