參數(shù)資料
型號: MCP4161-104E/P
廠商: Microchip Technology
文件頁數(shù): 3/88頁
文件大小: 0K
描述: IC POT DGTL SNGL 100K SPI 8DIP
標(biāo)準(zhǔn)包裝: 60
系列: WiperLock™
接片: 257
電阻(歐姆): 100k
電路數(shù): 1
溫度系數(shù): 標(biāo)準(zhǔn)值 150 ppm/°C
存儲器類型: 易失
接口: 3 線 SPI(芯片選擇)
電源電壓: 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 通孔
封裝/外殼: 8-DIP(0.300",7.62mm)
供應(yīng)商設(shè)備封裝: 8-PDIP
包裝: 管件
產(chǎn)品目錄頁面: 675 (CN2011-ZH PDF)
2008 Microchip Technology Inc.
DS22059B-page 11
MCP414X/416X/424X/426X
1.1
SPI Mode Timing Waveforms and Requirements
FIGURE 1-1:
SPI Timing Waveform (Mode = 11).
TABLE 1-1:
SPI REQUIREMENTS (MODE = 11)
#
Characteristic
Symbol
Min
Max Units
Conditions
SCK Input Frequency
FSCK
—10
MHz VDD = 2.7V to 5.5V
—1
MHz VDD = 1.8V to 2.7V
70
CS Active (VIL or VIHH) to SCK↑ input
TcsA2scH
60
ns
71
SCK input high time
TscH
45
ns
VDD = 2.7V to 5.5V
500
ns
VDD = 1.8V to 2.7V
72
SCK input low time
TscL
45
ns
VDD = 2.7V to 5.5V
500
ns
VDD = 1.8V to 2.7V
73
Setup time of SDI input to SCK
↑ edge
TDIV2scH
10
ns
74
Hold time of SDI input from SCK
↑ edge
TscH2DIL20
ns
77
CS Inactive (VIH) to SDO output hi-impedance
TcsH2DOZ
50
ns
80
SDO data output valid after SCK
↓ edge
TscL2DOV
70
ns
VDD = 2.7V to 5.5V
170
ns
VDD = 1.8V to 2.7V
83
CS Inactive (VIH) after SCK↑ edge
TscH2csI
100
ns
VDD = 2.7V to 5.5V
1ms
VDD = 1.8V to 2.7V
84
Hold time of CS Inactive (VIH) to
CS Active (VIL or VIHH)
TcsA2csI
50
ns
Note 1:
This specification by design.
CS
SCK
SDO
SDI
70
71
72
73
74
75, 76
77
78
79
80
SDI
MSb
LSb
BIT6 - - - - - -1
MSb IN
BIT6 - - - -1
LSb IN
83
84
VIH
VIL
VIHH
VIH
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