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參數(shù)資料
型號： MCP6031T-E/SN
廠商： Microchip Technology
文件頁數(shù)： 12/34頁
文件大?。?/td> 0K
描述： IC OPAMP SNGL 1.8V 8SOIC
標準包裝： 3,300
放大器類型： 通用
電路數(shù)： 1
輸出類型： 滿擺幅
轉換速率： 0.004 V/µs
增益帶寬積： 10kHz
電流 - 輸入偏壓： 1pA
電壓 - 輸入偏移： 150µV
電流 - 電源： 0.9µA
電流 - 輸出 / 通道： 23mA
電壓 - 電源，單路/雙路(±)： 1.8 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應商設備封裝： 8-SOICN
包裝： 帶卷 (TR)
配用： MCP6031DM-PTPLS-ND - BOARD DEMO MCP6031 PHOTODIODE
其它名稱： MCP6031T-E/SNTR
MCP6031/2/3/4
DS22041B-page 2
2008 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
VDD – VSS ........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (VIN+, VIN-) .......... VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short-Circuit Current .................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.....................................-65°C to +150°C
Maximum Junction Temperature (TJ) ..........................+150°C
ESD protection on all pins (HBM; MM)
................ ≥ 4 kV; 400V
Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, V
DD = +1.8V to +5.5V, VSS=GND, TA= +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
VOS
-150
—
+150
V
VDD = 3.0V, VCM = VDD/3
Input Offset Drift with Temperature
ΔV
OS/ΔTA
—
±3.0
—
V/°C TA= -40°C to +125°C,
VDD = 3.0V, VCM = VDD/3
Power Supply Rejection Ratio
PSRR
70
88
—
dB
VCM = VSS
Input Bias Current and Impedance
Input Bias Current
IB
—
±1.0
100
pA
IB
—60
—
pA
TA = +85°C
IB
—
2000
5000
pA
TA = +125°C
Input Offset Current
IOS
—
±1.0
—
pA
Common Mode Input Impedance
ZCM
—1013||6
—
Ω||pF
Differential Input Impedance
ZDIFF
—1013||6
—
Ω||pF
Common Mode
Common Mode Input Voltage
Range
VCMR
VSS 0.3
—
VDD + 0.3
V
Common Mode Rejection Ratio
CMRR
70
95
—
dB
VCM = -0.3V to 2.1V,
VDD = 1.8V
72
93
—
dB
VCM = -0.3V to 5.8V,
VDD = 5.5V
70
89
—
dB
VCM = 2.75V to 5.8V,
VDD = 5.5V
72
93
—
dB
VCM = -0.3V to 2.75V,
VDD = 5.5V
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
AOL
95
115
—
dB
0.2V < VOUT < (VDD – 0.2V)
RL = 50 kΩ to VL
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