V
參數(shù)資料
型號(hào): MCP6031T-E/SN
廠商: Microchip Technology
文件頁(yè)數(shù): 23/34頁(yè)
文件大?。?/td> 0K
描述: IC OPAMP SNGL 1.8V 8SOIC
標(biāo)準(zhǔn)包裝: 3,300
放大器類型: 通用
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 0.004 V/µs
增益帶寬積: 10kHz
電流 - 輸入偏壓: 1pA
電壓 - 輸入偏移: 150µV
電流 - 電源: 0.9µA
電流 - 輸出 / 通道: 23mA
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 帶卷 (TR)
配用: MCP6031DM-PTPLS-ND - BOARD DEMO MCP6031 PHOTODIODE
其它名稱: MCP6031T-E/SNTR
2008 Microchip Technology Inc.
DS22041B-page 3
MCP6031/2/3/4
AC ELECTRICAL SPECIFICATIONS
Output
Maximum Output Voltage Swing
VOL, VOH VSS + 10
VDD – 10
mV
RL = 50 kΩ to VL,
0.5V input overdrive
Output Short-Circuit Current
ISC
—±5
mA
VDD = 1.8V
—±23
mA
VDD = 5.5V
Power Supply
Supply Voltage
VDD
1.8
5.5
V
Quiescent Current per Amplifier
IQ
0.4
0.9
1.35
A
IO = 0, VCM = VDD,
VDD = 5.5V
Electrical Characteristics: Unless otherwise indicated, T
A = +25°C, VDD = +1.8 to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, CL = 60 pF, RL = 1 MΩ to VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
10
kHz
Phase Margin
PM
65
°
G = +1 V/V
Slew Rate
SR
4.0
V/ms
Noise
Input Noise Voltage
Eni
3.9
Vp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—165
nV/
√Hz f = 1 kHz
Input Noise Current Density
ini
—0.6
fA/
√Hz f = 1 kHz
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V
DD = +1.8V to +5.5V, VSS=GND, TA= +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
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