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| 型號： | MCP621ST-E/OT |
| 廠商： | Microchip Technology |
| 文件頁數(shù)： | 21/66頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP SGL 2.5MA 20MHZ SOT23-5 |
| 標準包裝： | 1 |
| 系列： | mCal 技術(shù) |
| 放大器類型： | 通用 |
| 電路數(shù)： | 1 |
| 輸出類型： | 滿擺幅 |
| 轉(zhuǎn)換速率： | 10 V/µs |
| 增益帶寬積： | 20MHz |
| 電流 - 輸入偏壓： | 5pA |
| 電壓 - 輸入偏移： | 200µV |
| 電流 - 電源： | 2.5mA |
| 電流 - 輸出 / 通道： | 70mA |
| 電壓 - 電源，單路/雙路(±)： | 2.5 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | SC-74A，SOT-753 |
| 供應(yīng)商設(shè)備封裝： | SOT-23-5 |
| 包裝： | 標準包裝 |
| 其它名稱： | MCP621ST-E/OTDKR |
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MCP621/1S/2/3/4/5/9
DS22188C-page 28
2009-2011 Microchip Technology Inc.
It is also possible to add a capacitor (CF) in parallel with
RF to compensate for the destabilizing effect of CG.
This makes it possible to use larger values of RF.
The conditions for stability are summarized in
EQUATION 4-10:
4.5
Power Supply
With this family of operational amplifiers, the power
supply pin (VDD for single supply) should have a local
bypass capacitor (i.e., 0.01 F to 0.1 F) within 2 mm
for good high-frequency performance. Surface mount,
multilayer ceramic capacitors, or their equivalent,
should be used.
These op amps require a bulk capacitor (i.e., 2.2 F or
larger) within 50 mm to provide large, slow currents.
Tantalum capacitors, or their equivalent, may be a good
choice. This bulk capacitor can be shared with other
nearby analog parts as long as crosstalk through the
supplies does not prove to be a problem.
4.6
High Speed PCB Layout
These op amps are fast enough that a little extra care
in the PCB (Printed Circuit Board) layout can make a
significant difference in performance. Good PC board
layout
techniques
will
help
you
achieve
the
performance shown in the specifications and Typical
Performance Curves; it will also help you minimize
EMC (Electro-Magnetic Compatibility) issues.
Use a solid ground plane. Connect the bypass local
capacitor(s) to this plane with minimal length traces.
This cuts down inductive and capacitive crosstalk.
Separate digital from analog, low speed from high
speed, and low power from high power. This will reduce
interference.
Keep sensitive traces short and straight. Separate
them from interfering components and traces. This is
especially important for high-frequency (low rise time)
signals.
Sometimes, it helps to place guard traces next to victim
traces. They should be on both sides of the victim
trace, and as close as possible. Connect guard traces
to ground plane at both ends, and in the middle for long
traces.
Use coax cables, or low inductance wiring, to route the
signal and power to and from the PCB. Mutual and self
inductance of power wires is often a cause of crosstalk
and unusual behavior.
4.7
Typical Applications
4.7.1
POWER DRIVER WITH HIGH GAIN
Figure 4-13 shows a power driver with high gain
(1 + R2/R1). The MCP621/1S/2/3/4/5/9 op amp’s short
circuit current makes it possible to drive significant
loads. The calibrated input offset voltage supports
accurate response at high gains. R3 should be small,
and equal to R1||R2, in order to minimize the bias
current induced offset.
FIGURE 4-13:
Power Driver.
4.7.2
OPTICAL DETECTOR AMPLIFIER
Figure 4-14 shows a transimpedance amplifier, using
the MCP621 op amp, in a photo detector circuit. The
photo detector is a capacitive current source. The op
amp’s input Common mode capacitance (9 pF, typical)
and Differential capacitance (2 pF, typical) act in paral-
lel with CD. RF provides enough gain to produce 10 mV
at
VOUT. CF stabilizes the gain and limits
the transimpedance bandwidth to about 0.51 MHz.
RF’s parasitic capacitance (e.g., 0.15 pF for a
0603 SMD) acts in parallel with CF.
FIGURE 4-14:
Transimpedance Amplifier
for an Optical Detector.
f
F
f
GBWP
2G
N2
()
, G
N1
G
N2
<
≤
We need:
G
N1
1R
F RG
+
=
G
N2
1C
G CF
+
=
f
F
12
πR
FCF
()
=
f
Z
f
F GN1 GN2
()
=
Given:
f
F
f
GBWP
4G
N1
()
, G
N1
G
N2
>
≤
R1
R2
VIN
VDD/2
VOUT
R3
RL
MCP62X
Photo
Detector
CD
CF
RF
VDD/2
30pF
100 k
Ω
3pF
ID
100 nA
VOUT
MCP621
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