Electrical Characteristics: Unless ot" />
參數(shù)資料
型號: MCP6N11T-100E/SN
廠商: Microchip Technology
文件頁數(shù): 47/50頁
文件大小: 0K
描述: IC AMP INSTR RRIO 35MHZ 8SOIC
標(biāo)準(zhǔn)包裝: 3,300
放大器類型: 儀表
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 6 V/µs
增益帶寬積: 35MHz
電流 - 輸入偏壓: 10pA
電壓 - 輸入偏移: 350µV
電流 - 電源: 800µA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 帶卷 (TR)
MCP6N11
DS25073A-page 6
2011 Microchip Technology Inc.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA =25°C, VDD = 1.8V to 5.5V, VSS = GND,
EN/CAL =VDD, VCM =VDD/2, VDM =0V, VREF =VDD/2, VL =VDD/2, RL =10kΩ to VL, CL = 60 pF and GDM =GMIN;
Parameters
Sym
Min
Typ
Max
Units
GMIN
Conditions
AC Response
Gain Bandwidth
Product
GBWP
— 0.50 GMIN
MHz
1 to 10
35
MHz
100
Phase Margin
PM
70
°
all
Open-Loop Output
Impedance
ROL
—0.9
k
Ω
1 to 10
—0.6
k
Ω
100
Power Supply
Rejection Ratio
PSRR
94
dB
all
f < 10 kHz
Common Mode
Rejection Ratio
CMRR
104
dB
1 to 10 f < 10 kHz
94
dB
100
f < 10 kHz
Step Response
Slew Rate
SR
3
V/s
1 to 10 VDD =1.8V
—9
V/s
VDD =5.5V
2
V/s
100
VDD =1.8V
—6
V/s
VDD =5.5V
Overdrive Recovery,
Input Common Mode
tIRC
—10
s
all
VCM =VSS –1V (or VDD + 1V) to VDD/2,
GDMVDM = ±0.1V, 90% of VOUT change
Overdrive Recovery,
Input Differential
Mode
tIRD
—5
s
VDM =VDML –(0.5V)/GMIN
(or VDMH +(0.5V)/GMIN) to 0V,
VREF =(VDD –GDMVDM)/2,
90% of VOUT change
Overdrive Recovery,
Output
tOR
—8
s
GDM =2GMIN, GDMVDM =0.5VDD to 0V,
VREF =0.75VDD (or 0.25VDD),
90% of VOUT change
Noise
Input Noise Voltage
Eni
570/GMIN
—VP-P 1 to 10 f = 0.1 Hz to 10 Hz
—18
VP-P
100
Input Noise Voltage
Density
eni
950/GMIN
—nV/
√Hz 1 to 10 f = 100 kHz
—35
nV/
√Hz
100
Input Current Noise
Density
ini
—1
fA/
√Hz
all
f = 1 kHz
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