參數資料
型號： MCR08B
廠商： ON SEMICONDUCTOR
英文描述： SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
中文描述： 敏感柵可控硅整流器
文件頁數： 1/6頁
文件大?。?/td> 294K
代理商： MCR08B
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
PNPN devices designed for line powered consumer applications such as relay and
lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and
detection circuits. Supplied in surface mount package for use in automated
manufacturing.
Sensitive Gate Trigger Current
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Devices Supplied on 1 K Reel
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(1/2 Sine Wave, RGK = 1000
, TJ = 25 to 110
°
C)
MCR08BT1
MCR08DT1
MCR08MT1
VDRM, VRRM
200
400
600
Volts
On-State Current RMS (TC = 80
°
C)
IT(RMS)
0.8
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 25
°
C)
ITSM
10
Amps
Circuit Fusing Considerations (t = 8.3 ms)
I2t
0.4
A2s
Peak Gate Power, Forward, TA = 25
°
C
Average Gate Power (TC = 80
°
C, t = 8.3 ms)
Operating Junction Temperature Range
PGM
PG(AV)
TJ
Tstg
TL
0.1
Watts
0.01
Watts
–40 to +110
°
C
Storage Temperature Range
–40 to +150
°
C
Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum)
260
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
PCB Mounted per Figure 1
R
θ
JA
156
°
C/W
Thermal Resistance, Junction to Tab
Measured on Anode Tab Adjacent to Epoxy
R
θ
JT
25
°
C/W
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such
that the voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MCR08BT1/D
SEMICONDUCTOR TECHNICAL DATA
SCR
0.8 AMPERE RMS
200 thru 600 Volts
CASE 318E-04
(SOT-223)
STYLE 10
*Motorola preferred devices
REV 1
相關PDF資料
PDF描述
MCR08BT1 SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
MCR08MT1 SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
MDC3205 RELAY/SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK
MDC5000T1 SILICON SMALLBLOCK INTEGRATED CIRCUIT
MDC5001T1 SILICON SMALLBLOCK INTEGRATED CIRCUIT
相關代理商/技術參數
參數描述
MCR08BT1 功能描述:SCR 200V 800mA RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR08BT1 T/R 功能描述:SCR TAPE-7 TRIAC RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR08BT1,115 功能描述:SCR TAPE-7 TRIAC RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR08BT1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers
MCR08BT1115 制造商:NXP Semiconductors 功能描述:THYRISTOR 800mA 200V SOT-22 制造商:NXP Semiconductors 功能描述:THYRISTOR 0.8A 200V SOT223 制造商:NXP Semiconductors 功能描述:THYRISTOR 800mA 200V SOT-223
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