參數(shù)資料
型號(hào)： MCZ33395EW
廠(chǎng)商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： Three-Phase Gate Driver IC
中文描述： 三相柵極驅(qū)動(dòng)集成電路
文件頁(yè)數(shù)： 6/16頁(yè)
文件大?。?/td> 282K
代理商： MCZ33395EW
Analog Integrated Circuit Device Data
Freescale Semiconductor
6
33395
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions -40
°
C
≤
T
A
≤
125
°
C, 5.5 V
≤
V
IGNP
≤
24 V unless otherwise noted. Typical values reflect
approximate parameter mean at T
A
= 25
°
C under normal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER INPUT
V
IGN
Current @ 5.5 V – 24 V, V
DD
= 5.5 V
I
IGN
–
0.2
1.0
mA
V
IGNP
Current @ 5.5 V – 24 V, V
DD
= 5.5 V
I
IGNP
V
IGNP
SD
–
–
100
mA
V
IGNP
Overvoltage Shutdown
25
33
36.5
V
V
IGNP
Voltage
V
IGNP
I
V
DD
5.5
–
24
V
V
DD
Current @ 5.5 VDC, 5.5 V
≤
V
IGNP
≤
24 V
–
1.8
4.0
mA
V
DD
Low-Voltage Reset Level
V
DD(RESET)
2.5
3.2
4.0
V
V
DD
One-Time Fuse (Logic Supply)
–
7.0
–
–
V
INPUT OUTPUT
Input Current at V
DD
= 5.5 V
LSEn, HSEn, PWM, and MODEn = 3.0 V
I
IN
5.0
12
25
μ
A
Input Threshold at V
DD
= 5.5 V
LSEn, HSEn, PWM, and MODEn
(4)
V
TH
1.0
2.0
3.0
V
V
SCRn
Source Sense Voltage
SRC1, SRC2, SRC3
V
SCRn
-0.3
V
IGNP
24
V
Comparator Input Offset Voltage
V
INP(OFFSET)
5.0
14
20
mV
Comparator Input Bias Current
V
INP(BIAS)
-500
-170
500
nA
Comparator Input Offset Current
I
INP(OFFSET)
-300
-3.0
300
nA
Common Mode Voltage
(5)
V
CMR
0
–
V
DD
- 2.0
V
DC
Comparator Differential Input Voltage
(5)
V
INPdiff
-V
DD
–
+V
DD
V
Charge Pump Voltage V
IGN
(6)
V
IGNP
= 5.5 V, I
C
RES
= 1.0 mA
V
IGNP
= 9.0 V, I
C
RES
= 1.0 mA
V
IGNP
= 12 V, I
C
RES
= 5.0 mA
V
IGNP
= 24 V, I
C
RES
= 1.0 mA
V
IGNP
= 24 V, I
C
RES
= 5.0 mA
V
CRES
- V
IGNP
4.0
4.0
4.5
8.0
4.5
6.0
7.5
10
16
12
18
18
18
18
18
V
V
GDH
Output Voltage with GDHn in ON State
V
IGNP
= 5.5 V, I
GDHn
= 1.0 mA
V
IGNP
= 12 V, I
GDHn
= 5.0 mA
V
IGNP
= 24 V, I
GDHn
= 5.0 mA
V
GDHn(
on
)
- V
SRCn
4.0
4.0
4.5
5.2
9.0
11
18
18
18
V
V
GDH
Output Voltage with GDHn in OFF State
V
IGNP
= SRCn = 14 V, I
GDHn
= 1.0 mA
V
GDHn(
off
)
-1.0
0.6
1.0
V
Notes
4.
5.
6.
Logic inputs LSEn, HSEn, PWM, and MODEn have internal 20
μ
A internal sinks.
Guaranteed by design and characterization. Not production tested.
The Charge Pump has a positive temperature coefficient. Therefore the Min’s occur at -40°C, Typ’s at 25°C, and Max’s at 125°C.
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