參數(shù)資料
型號： MCZ33395EW
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： Three-Phase Gate Driver IC
中文描述： 三相柵極驅(qū)動(dòng)集成電路
文件頁數(shù)： 8/16頁
文件大小： 282K
代理商： MCZ33395EW
Analog Integrated Circuit Device Data
Freescale Semiconductor
8
33395
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
TIMING DIAGRAM
Figure 4. Shoot-Through Suppression
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions -40
°
C
≤
T
A
≤
125
°
C, 5.5 V
≤
V
IGNP
≤
24 V unless otherwise noted. Typical values
reflect approximate parameter mean at T
A
= 25
°
C under normal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
High-Side (GDHn) and Low-Side Drivers (GDHn) Rise Time
(25% to 75%), C
ISS
Value = 2000 pF
(8)
t
RH
–
0.35
1.5
μ
s
High-Side (GDHn) and Low-Side Drivers (GDHn) Fall Time
(75% to 25%), C
ISS
Value = 2000 pF
(8)
t
FH
–
0.25
1.5
μ
s
Shoot-Through Suppression Time Delay (33395)
(8)
,
(9)
33395
33395T
t
D1,
t
D2
1.0
0.2
3.0
0.65
5.5
1.0
μ
s
Current Limit Time Delay
(10)
t
ILIMDELAY
1.5
2.8
5.0
μ
s
Notes
8.
9.
See
Figure 4
, page
8
.
Shoot-Through Suppression Time Delay is provided to prevent directly connected high- and low-side MOSFETs from being on
simultaneously.
Current Limit Time Delay: The internal comparator places the device in the current limit mode when the comparator output goes LOW
and sets an internal logic bit. This takes a finite amount of time and is stated as the Current Limit Time Delay.
10.
100
75
25
0
100
75
25
0
t
RH
t
FH
t
FL
t
RL
TIME
G
G
S
t
D2
t
D1
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參數(shù)描述
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MCZ33399EFR2 功能描述:輸入/輸出控制器接口集成電路 LIN INTERFACE RoHS:否 制造商:Silicon Labs 產(chǎn)品: 輸入/輸出端數(shù)量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray
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