MAXIMUM RATINGS ELECTRICAL CHARACTERISTI" />
參數(shù)資料
型號(hào)： MCZ33905S5EK
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 16/106頁(yè)
文件大?。?/td> 0K
描述： IC SYSTEM BASIS CHIP GEN2 32SOIC
標(biāo)準(zhǔn)包裝： 42
應(yīng)用： 系統(tǒng)基礎(chǔ)芯片
接口： CAN，LIN
電源電壓： 5.5 V ~ 27 V
封裝/外殼： 32-BSOP（0.295"，7.50mm 寬）裸露焊盤
供應(yīng)商設(shè)備封裝： 32-SOICW 裸露焊盤
包裝： 管件
安裝類型： 表面貼裝
Analog Integrated Circuit Device Data
Freescale Semiconductor
17
33903/4/5
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 5. Maximum Ratings
All voltages are referenced to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent
damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS(8)
Supply Voltage at VSUP/1 and VSUP2
Normal Operation (DC)
Transient Conditions (Load Dump)
VSUP1/2
VSUP1/2TR
-0.3 to 28
-0.3 to 40
V
DC voltage on LIN/1 and LIN2
Normal Operation (DC)
Transient Conditions (Load Dump)
VBUSLIN
VBUSLINTR
-28 to 28
-28 to 40
V
DC voltage on CANL, CANH, SPLIT
Normal Operation (DC)
Transient Conditions (Load Dump)
VBUS
VBUSTR
-28 to 28
-32 to 40
V
DC Voltage at SAFE
Normal Operation (DC)
Transient Conditions (Load Dump)
VSAFE
VSAFETR
-0.3 to 28
-0.3 to 40
V
DC Voltage at I/O-0, I/O-1, I/O-2, I/O-3 (LIN-T Pins)
Normal Operation (DC)
Transient Conditions (Load Dump)
VI/O
VI/OTR
-0.3 to 28
-0.3 to 40
V
DC voltage on TXD-L, TXD-L1 TXD-L2, RXD-L, RXD-L1, RXD-L2
VDIGLIN
-0.3 to
VDD +0.3
V
DC voltage on TXD, RXD(10)
VDIG
-0.3 to
VDD +0.3
V
DC Voltage at INT
VINT
-0.3 to 10
V
DC Voltage at RST
VRST
-0.3 to
VDD +0.3
V
DC Voltage at MOSI, MSIO, SCLK and CS
VRST
-0.3 to
VDD +0.3
V
DC Voltage at MUX-OUT
VMUX
-0.3 to
VDD +0.3
V
DC Voltage at DBG
VDBG
-0.3 to 10
V
Continuous current on CANH and CANL
ILH
200
mA
DC voltage at VDD, 5V-CAN, VAUX, VCAUX
VREG
-0.3 to 5.5
V
DC voltage at VBASE(9) and VBAUX
VREG
-0.3 to 40
V
DC voltage at VE(10)
VE
-0.3 to 40
V
DC voltage at VSENSE
VSENSE
-28 to 40
V
Notes
8.
The voltage on non-VSUP pins should never exceed the VSUP voltage at any time or permanent damage to the device may occur.
9.
If the voltage delta between VSUP/1/2 and VBASE is greater than 6.0 V, the external VDD ballast current sharing functionality may be
damaged.
10.
Potential Electrical Over Stress (EOS) damage may occur if RXD is in contact with VE while the device is ON.
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