參數(shù)資料
型號: MCZ79076EG
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: Electronic Ignition Control Circuit
中文描述: 電子點火控制電路
文件頁數(shù): 5/13頁
文件大?。?/td> 149K
代理商: MCZ79076EG
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
79076
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Static Electrical Characteristics
Characteristics noted under conditions
7.0 V
V
CC
18 V, -
40
°
C
T
A
125
°
C, GND = 0 V
unless otherwise noted. Typical
values noted reflect the approximate parameter means at
T
A
= 25°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
INPUTS
Advance Input Resistance
(V
CC
= 16 V, Ref/Dwell = 1.0 V, Advance = 1.0 mA, EST =
Bypass = 0 V)
R
(A)
15
18
25
k
Advance Voltage
(7)
V
CC
= 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V
V
TH(A)
-
0.05
0.1
V
Advance Threshold Voltage
(7)
(V
CC
= 16 V, Ref/Dwell = 1.0 V, EST = Bypass = 0 V,)
Dwell = Reference = RPM Detect = open,
Dwell Control = sinking 10 μA)
Increasing
Decreasing
Hysteresis
V
TH+(A)
V
TH-(A)
V
HYS(A)
V
B
+ 0.103
V
B
+ 0.045
0.018
V
B
+ 0.114
V
B
+ 0.068
0.045
V
B
+ 0.130
-
-
V
Bypass Input Resistance
(V
CC
= 16 V, Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V)
R
(BP)
6.0
9.2
16
k
Bypass Voltage
(V
CC
= 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0V)
V
(BP)
-
0.065
0.1
V
Bypass Threshold Voltage
(8)
(Ref/Dwell = Advance = 1.0 V, EST = 3.0 V)
Increasing
Decreasing
Hysteresis
V
TH+(BP)
V
TH-(BP)
V
HYS(BP)
V
B
+ 1.6
V
B
+ 0.9
0.65
V
B
+ 0.188
V
B
+ 0.103
0.86
V
B
+ 2.1
-
-
V
Current Sense Threshold Voltage
(9)
(V
CC
= 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 3.0 V)
V
TH(CS)
90
105
121
mV
EST Input Resistance
(V
CC
= 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
R
(EST)
7.0
10.3
18
k
EST Input Voltage (EST Mode)
(V
CC
= 16 V, Ref/Dwell = Advance = 1.0 V, Bypass = 3.0 V)
V
(EST)
-
0.07
0.1
V
Notes
7.
Advance Threshold Voltage is the positive (or negative) going voltage on Advance necessary cause the Dwell Control voltage to positive
(or negative) going transition 2.0 V respectively. It is expressed as V
TH±(A)
= V
B
+ V
X
where V
B
is the Bias Voltage and V
X
is the additional
voltage necessary to attain the threshold.
Bypass Threshold Voltage is the positive (or negative) going voltage on Bypass necessary cause the Dwell voltage to positive (or
negative) going transition 1.5 V respectively. It is expressed as V
TH±(BP)
= V
B
+ V
X
where V
B
is the Bias Voltage and V
X
is the additional
voltage necessary to attain the threshold.
Increasing voltage on Current Sense which when attained will cause Dwell to transition low to 1.5 V with a 10 mA load.
8.
9.
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