參數(shù)資料
型號(hào)： MCZ79076EG
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： Electronic Ignition Control Circuit
中文描述： 電子點(diǎn)火控制電路
文件頁數(shù)： 8/13頁
文件大?。?/td> 149K
代理商： MCZ79076EG
Analog Integrated Circuit Device Data
Freescale Semiconductor
8
79076
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Reference High/Un-Clamped
(27)
V
CC
= 4.0 V, I
R
= sourcing 100 mA, Ref/Dwell = 3.0 V, Advance =
1.0 V, EST = Bypass = 0 V
V
(R)HI/UNCL
3.2
3.36
-
V
Reference High/Clamped
(27)
V
CC
= 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
I
R
= sourcing 10 μA
I
R
= sourcing 1.0 mA
V
(R)HI/CL
-
12
5.41
15.3
6.0
-
V
CONTROLS
Dwell Control Negative Clamp Voltage
(27)
V
CC
= 16 V, I
DC
= sourcing 100 μA, Ref/Dwell = Advance = 1.0 V, EST
= Bypass = 0 V
V
(DC)-CL
0.5
0.7
0.8
V
Dwell Control Positive Clamp Voltage
(27)
V
CC
= 16 V, I
DC
= sinking 100 μA, Ref/Dwell = 1.0 V, Advance = Open,
EST = Bypass = 0 V
V
(DC)+CL
8.0
8.2
8.4
V
Dwell Control Charge Current
(27)
V
CC
= 16 V, Ref/Dwell = 1.0 V, Advance = Dwell Control = 3.0 V, EST
= Bypass = 0 V
I
(DC)CHG
30
47
58
μA
Dwell Control Discharge Current
(27)
V
CC
= 16 V, Current Sense = 0.5 V, Ref/Dwell = Advance = 1.0 V, EST
= Bypass = 0 V
I
(DC)DISCHG
18
33
48
μA
Dwell Control Input Current
(27)
V
CC
= 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V, Dwell
Control = 7.0 V
I
(DC)SINK
-
1.1
2.5
μA
RPM Detect Charge Current ON
(27)
V
CC
= 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
I
(RPM)CHG
-4.0
0.54
1.0
mA
RPM Detect Current
(27)
V
CC
= 16 V, 1.0 V = Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V
RPM Detect = 0.5 V
RPM Detect = 1.5 V
I
(RPM)LKG
04.0
-0.1
0.55
0.01
1.0
0.1
μA
RPM Detect Clamp Voltage
(27)
V
CC
= 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass =
0 V, RPM Detect = sourcing 16 μA
V
(RPM)CL
2.4
2.5
2.7
V
Notes
18.
19.
20.
21.
22.
23.
24.
Dwell Control adjusts the reference voltage of Dwell Comparator.
Dwell Control. sourcing 100 μA.
Dwell Control sinking 100 μA.
Dwell Control at 3.0 V; Internal Dwell Control transistor OFF.
Dwell Control at 3.0 V; Internal Dwell Control transistor ON.
Dwell Control at 7.0 V; Internal Dwell Control transistor OFF.
Q53 and Q54 both ON; Measured with RPM Detect voltage at 0.5 V to reflect maximum source current capability. See
Typical
Applications on page 10
Q53 and Q54 both OFF; Measured with RPM Detect voltage at 0.5 V and 1.5 V to reflect maximum leakage current.
Typical Applications
on page 10
Q53 and Q54 both ON; RPM Detect sinking 16 μA.
Typical Applications on page 10
25.
26.
Table 2. Static Electrical Characteristics (continued)
Characteristics noted under conditions
7.0 V
≤
V
CC
≤
18 V, -
40
°
C
≤
T
A
≤
125
°
C, GND = 0 V
unless otherwise noted. Typical
values noted reflect the approximate parameter means at
T
A
= 25°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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