參數(shù)資料
型號: MF1S7035DUB
廠商: NXP Semiconductors N.V.
元件分類: 外設及接口
英文描述: MIFARE Classic 4K - Mainstream contactless smart card IC for fast and easy solution development
封裝: MF1S7035DA4<SOT500-2 (PLLMC)|<<http://www.nxp.com/packages/SOT500-2.html<1<Always Pb-free,;MF1S7035DUB<Uncased die|<<<1<Always Pb-free,;MF1S7035DUC<Uncased die|<
文件頁數(shù): 24/35頁
文件大?。?/td> 623K
代理商: MF1S7035DUB
MF1S703x
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NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.0 — 2 December 2010
199330
24 of 35
NXP Semiconductors
MF1S703x
MIFARE Classic 4K - Mainstream contactless smart card IC
13. Wafer specification
Table 24.
Wafer
diameter
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer backside
material
treatment
roughness
[1]
the gap between chips may vary due to changing foil expansion
Table 25.
Bond pads (substrate connected to VSS)
size (metallization)
[1]
Pads VSS and TESTIO are disconnected when wafer is sawn.
Table 26.
Au bump (substrate connected to VSS)
material
hardness
shear strength
height
Wafer specifications MF1S7035DUx
200 mm typical (8 inches)
150
m
15
m
not applicable
15601
Si
ground and stress relieve
R
a
max = 0.5
m
R
t
max = 5
m
Chip dimensions
step size
x = 1420
m
y = 1340
m
x = 86,4
m
y = 86,4
m
scribe line
Passivation
type
material
thickness
sandwich structure
PSG / nitride
500 nm / 600 nm
Bond pad specifications
LA, LB = 118
m
118
m
VSS
[1]
= 108
m
108
m
TESTIO
[1]
= 95
m
110
m
LA, LB = 90
m
90
m
VSS
[1]
= 80
m
80
m
TESTIO
[1]
= 67
m
82
m
Al-Cu
850 nm
size (pad opening)
material
thickness
Bump specifications
>
99.9 % pure Au
35 to 80 HV 0.005
> 70 MPa
18
m
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