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參數(shù)資料
| 型號： | MF3MOD2101DA4 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | MIFARE DESFire EV1 contactless multi-application IC |
| 文件頁數(shù)： | 4/18頁 |
| 文件大?。?/td> | 126K |
| 代理商： | MF3MOD2101DA4 |
MF3ICDX21_41_81_SDS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.1 — 21 December 2010
145631
4 of 18
NXP Semiconductors
MF3ICDx21_41_81
MIFARE DESFire EV1 contactless multi-application IC
4. Quick reference data
[1]
Stresses above one or more of the values may cause permanent damage to the device.
[2]
Exposure to limiting values for extended periods may affect device reliability.
[3]
Measured with LCR meter.
5. Ordering information
Table 1.
Symbol
f
i
C
i
Quick reference data
[1][2]
Parameter
input frequency
input capacitance for
MF3ICD21/41/81
input capacitance for
MF3ICDH21/41/81
EEPROM characteristics
t
ret
retention time
N
endu(W)
write endurance
t
cy(W)
write cycle time
Conditions
Min
-
Typ
13.56
17.0
Max
-
19.04
Unit
MHz
pF
T
amb
= 22
C; f
i
= 13.56 MHz;
2.8 V RMS
[3]
14.96
64
69
74
pF
T
amb
= 22
C
T
amb
= 22
C
T
amb
= 22
C
10
200000
-
-
500000
2.9
-
-
-
year
cycle
ms
Table 2.
Type number
Ordering information
Package
Name
FFC
Description
8 inch wafer (sawn; 120
m thickness, on film frame carrier; electronic
fail die marking according to SECSII format); see
Ref. 4
,
8K EEPROM, 17pF input capacitance
8 inch wafer (sawn; 120
m thickness, on film frame carrier; electronic
fail die marking according to SECSII format); see
Ref. 4
,
4K EEPROM, 17pF input capacitance
8 inch wafer (sawn; 120
m thickness, on film frame carrier; electronic
fail die marking according to SECSII format); see
Ref. 4
,
2K EEPROM, 17pF input capacitance
8 inch wafer (sawn; 120
m thickness, on film frame carrier; electronic
fail die marking according to SECSII format); see
Ref. 5
,
8K EEPROM, 70pF input capacitance
8 inch wafer (sawn; 120
m thickness, on film frame carrier; electronic
fail die marking according to SECSII format); see
Ref. 5
,
4K EEPROM, 70pF input capacitance
8 inch wafer (sawn; 120
m thickness, on film frame carrier; electronic
fail die marking according to SECSII format); see
Ref. 5
,
2K EEPROM, 70pF input capacitance
plastic leadless module carrier package; 35 mm wide tape; see
Ref. 6
,
8K EEPROM, 17pF input capacitance
plastic leadless module carrier package; 35 mm wide tape; see
Ref. 6
,
4K EEPROM, 17pF input capacitance
plastic leadless module carrier package; 35 mm wide tape; see
Ref. 6
,
2K EEPROM, 17pF input capacitance
Version
-
MF3ICD8101DUD/05
MF3ICD4101DUD/05
FFC
-
MF3ICD2101DUD/05
FFC
-
MF3ICDH8101DUD/05
FFC
-
MF3ICDH4101DUD/05
FFC
-
MF3ICDH2101DUD/05
FFC
-
MF3MOD8101DA4/05
PLLMC
[1]
SOT500-2
MF3MOD4101DA4/05
PLLMC
[1]
SOT500-2
MF3MOD2101DA4/05
PLLMC
[1]
SOT500-2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MF3MOD4101DA4 | MIFARE DESFire EV1 contactless multi-application IC |
| MF3MOD8101DA4 | MIFARE DESFire EV1 contactless multi-application IC |
| MF3MODH2101DA4 | MIFARE DESFire EV1 contactless multi-application IC |
| MF3MODH4101DA4 | MIFARE DESFire EV1 contactless multi-application IC |
| MF3MODH8101DA4 | MIFARE DESFire EV1 contactless multi-application IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MF3MOD2101DA4/01,118 | 制造商:NXP Semiconductors 功能描述: |
| MF3MOD2101DA4/04,1 | 功能描述:RFID應(yīng)答器 MIFARE DESFire EV2 ContactlessMultiAppl RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| MF3MOD2101DA4/05,1 | 功能描述:RFID應(yīng)答器 MIFARE DESFire EV1 Contctless multi-app RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| MF3MOD2101DA4/051 | 制造商:NXP Semiconductors 功能描述:MIFARE DESFIRE 2K MOA4 |
| MF3MOD4001DV/406,1 | 功能描述:射頻收發(fā)器 MIFARE DESFIRE MOA4 RoHS:否 制造商:Atmel 頻率范圍:2322 MHz to 2527 MHz 最大數(shù)據(jù)速率:2000 Kbps 調(diào)制格式:OQPSK 輸出功率:4 dBm 類型: 工作電源電壓:1.8 V to 3.6 V 最大工作溫度:+ 85 C 接口類型:SPI 封裝 / 箱體:QFN-32 封裝:Tray |
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