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參數(shù)資料
| 型號(hào)： | MG1200FXF1US51 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA GTR Module Silicon N-Channel IGBT |
| 中文描述： | 東芝滋養(yǎng)模塊硅N溝道IGBT的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 94K |
| 代理商： | MG1200FXF1US51 |
MG1200FXF1US51
2001-09-05
2
Electrical Characteristics
(T
vj
125°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
20 V, V
CE
0 V
50
nA
Collector cut-off current
I
CES
V
CE
3300 V, V
GE
0 V
75
100
mA
Gate-emitter cut-off voltage
V
GE (off)
V
CE
5 V, I
C
1.2 A
4.4
V
Collector-emitter saturation voltage
V
CE (sat)
I
C
1200 A, V
GE
15 V
4.6
5.3
V
Input capacitance
C
ies
V
CE
10 V, V
GE
0 V, f 100 kHz
230
nF
Rise time
t
r
2.1
s
Turn-on time
t
on
0.3
s
Fall time
t
f
4.0
s
Switching time
Turn-off time
t
off
V
CC
1800 V, I
C
1200 A,
V
GG
15 V, C
GE
0.1 F,
RG (on)/(off) 3.9/3.3
(dic/dt (on)
4900 A/ s)
(Inductive load, L
s
160 nH)
1.8
s
Forward voltage of diode
V
F
I
F
1200 A, V
GE
0 V
3.5
4.0
V
Reverse recovery charge
Q
rr
1000
C
Peak reverse recovery current
I
rr
I
F
1200 A, V
GG
15 V,
di
F
/dt
4900 A/ s,
V
CC
1800 V
1500
A
turn-on loss
E
on
2.2
2.8
J
turn-off loss
E
off
V
CC
1800 V, I
C
1200 A,
V
GG
15 V, C
GE
0.1 F,
RG (on)/(off) 3.9/3.3
(dic/dt (on)
4900 A/ s)
(Inductive load, L
s
160 nH)
2.0
3.0
J
Switching dissipation
Diode reverse
recovery loss
E
dsw
I
F
1200 A, V
GG
15 V,
di
F
/dt
4900 A/ s,
V
CC
1800 V
1.0
1.5
J
Thermal Resistance
(T
c
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transistor (IGBT) stage
8.0
R
th (j-c)
Diode stage
16.0
Thermal Resistance
R
th (c-f)
Per module
(Note 1)
6.0
°C/kW
Note 1: Toshiba silicone’s YG6260 heat radiation grease is recommended for use with semiconductor devices.
Apply a thin, even (100-to-200- m) coating of grease.
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| MG1200V1US51 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT |
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