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參數(shù)資料
| 型號： | MG150Q2YS65H |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Power & High Speed Switching Applications |
| 中文描述： | 高功率 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 167K |
| 代理商： | MG150Q2YS65H |
MG150Q2YS65H
2002-10-04
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG150Q2YS65H
High Power & High Speed Switching
Applications
High input impedance
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
1200
V
Gate-emitter voltage
V
GES
20
V
DC
I
C
150
Collector current
1ms
I
CP
300
A
DC
I
F
150
Forward current
1ms
I
FM
300
A
Collector power dissipation
(Tc = 25°C)
P
C
890
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
40 to 125
°C
Isolation voltage
V
Isol
2500
(AC 1 minute)
V
Terminal
3
Screw torque
Mounting
3
N
m
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-95A4A
Weight: 255 g (typ.)
G1 E1/C2
E2
G2
E1
E2
C1
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