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參數(shù)資料
| 型號(hào)： | MG64P |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 0.25レm Embedded DRAM/ Customer Structured Arrays |
| 中文描述： | 0.25レ米嵌入式DRAM /客戶結(jié)構(gòu)數(shù)組 |
| 文件頁(yè)數(shù)： | 10/22頁(yè) |
| 文件大小： | 267K |
| 代理商： | MG64P |
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I
MG63P/64P/65P
I
––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
8
Oki Semiconductor
DC Characteristics (V
DD
Core = 2.25 to 2.75 V, V
DD
I/O = 3.0 to 3.6 V, V
SS
= 0 V, T
j
= -40° to +85°C)
Parameter
Symbol
Conditions
Rated Value
Typ.
[1]
Unit
Min.
1.
2.
Typical condition is V
DD
I/O = 3.3 V, V
DD
Core = 2.5 V, and T
j
= 25°C on a typical process.
RAM/ROM should be in powerdown mode.
Max.
High-level input voltage
V
IH
V
IL
V
t+
V
t-
V
t
V
OH
TTL input (normal)
2.0
–
V
DD
0.8
V
Low-level input voltage
TTL input (normal)
-0.0
–
TTL- level Schmitt
Trigger input buffer
Threshold voltage
TTL input
–
1.5
2.0
0.7
1.0
–
V
t+
- Vt-
I
OH
= -100 μA
I
OH
= -1, -2, -4, -6, -8, -12, -24 mA
I
OL
= 100
μ
A
I
OL
= 1, 2, 4, 6, 8, 12, 24 mA
V
IH
= V
DD
V
IH
= V
DD
(50-k
pull-down)
V
IL
= V
SS
V
IL
= V
SS
(50-k
pull-up)
V
IL
= V
SS
(3-k
pull-up)
V
OH
= V
DD
V
OH
= V
DD
(50-k
pull-down)
V
OL
= V
SS
V
OL
= V
SS
(50-k
pull-up)
V
OL
= V
SS
(3-k
pull-up)
Output open, V
IH
= V
DD
, V
IL
= V
SS
0.4
0.5
–
High-level output voltage (Output buffer)
V
DD
-0.2
2.4
–
–
–
–
Low-level output voltage (Output buffer)
V
OL
–
–
0.2
μA
–
–
0.4
High-level input current (Input buffer)
I
IH
–
–
10
10
66
200
Low-level input current (Normal input buffer)
I
IL
-10
–
10
-200
-66
-10
-3.3
-1.1
-0.3
mA
3-state output leakage current
(Normal input buffer)
I
OZH
-10
–
10
μA
10
66
200
I
OZL
-10
–
10
μA
-200
-66
-10
-3.3
-1.1
-0.3
mA
Stand-by current
[2]
I
DDQ
Design Dependent
μA
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