參數(shù)資料
型號: MGA-81563-TR1
英文描述: 0.1- 6 GHz 3 V, 14 dBm Amplifier
中文描述: 0.1 - 6 GHz的3伏,14 dBm的放大器
文件頁數(shù): 5/12頁
文件大?。?/td> 135K
代理商: MGA-81563-TR1
6-200
MGA-81563 Applications
Information
Introduction
This high performance GaAs
MMIC amplifier was developed for
commercial wireless applications
from 100 MHz to 6 GHz.
The MGA-81563 runs on only
3volts and typically requires only
42 mA to deliver 14.8 dBm of
output power at 1 dB gain
compression.
An innovative internal bias circuit
regulates the device’s internal
current to enable the MGA-81563
to operate over a wide tempera-
ture range with a single, positive
power supply of 3 volts.
The MGA-81563 will operate with
reduced performance with
voltages as low as 1.5 volts.
The MGA-81563 uses resistive
feedback to simultaneously
achieve flat gain over a wide
bandwidth and match the input
and output impedances to 50
.
The MGA-81563 is unconditionally
stable (K>1) over its entire
frequency range, making it both
very easy to use and yielding
consistent performance in the
manufacture of high volume
wireless products.
With a combination of high
linearity (+27 dBm output IP
3
) and
low noise figure (3 dB), the
MGA-81563 offers outstanding
performance for applications
requiring a high dynamic range,
such as receivers operating in
dense signal environments. A wide
dynamic range amplifier such as
the MGA-81563 can often be used
to relieve the requirements of
bulky, lossy filters at a receiver’s
input.
The 14.8 dBm output power (P
1dB
)
also makes the MGA-81563
extremely useful for pre-driver,
driver and buffer stages. For
transmitter gain stage applications
that require higher output power,
the MGA-81563 can provide
50mW (17 dBm) of saturated
output power with a high power
added efficiency of 45%.
Test Circuit
The circuit shown in Figure 10 is
used for 100% RF testing of Noise
Figure and Gain. The 3.9 nH
inductor at the input fix-tunes the
circuit to 2 GHz. The only purpose
of the RFC at the output is to
apply DC bias to the device under
test. Tests in this circuit are used
to guarantee the NF
test
and G
test
parameters shown in the table of
Electrical Specifications.
RF
INPUT
3.9 nH
22 nH
RFC
100 pF
100 pF
Vd
RF
OUTPUT
8
Figure 10. Test Circuit.
Phase Reference Planes
The positions of the reference
planes used to specify the S-
Parameters and Noise Parameters
for this device are shown in
Figure 11. As seen in the illustra-
tion, the reference planes are
located at the point where the
package leads contact the test
circuit.
TEST CIRCUIT
REFERENCE
PLANES
Figure 11. Phase Reference Planes.
Specifications and Statistical
Parameters
Several categories of parameters
appear within this data sheet.
Parameters may be described with
values that are either “minimum
or maximum,” “typical,” or
“standard deviations.”
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on of a minimum of
500parts taken from 3 non-
consecutive process lots of
semiconductor wafers. The data
derived from product character-
ization tends to be normally
distributed, e.g., fits the standard
“bell curve.”
Parameters considered to be the
most important to system perfor-
mance are bounded by
minimum
or
maximum
values. For the
MGA-81563, these parameters are:
Gain (G
test
), Noise Figure (NF
test
),
and Device Current (I
d
). Each of
these guaranteed parameters is
100% tested.
Values for most of the parameters
in the table of Electrical Specifica-
tions that are described by
typical
data are the mathematical mean
(
μ
), of the normal distribution
taken from the characterization
data. For parameters where
measurements or mathematical
averaging may not be practical,
such as the Noise and S-parameter
tables or performance curves, the
data represents a nominal part
taken from the “center” of the
characterization distribution.
Typical values are intended to be
used as a basis for electrical
design.
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