參數(shù)資料
型號(hào): MGB19N35CL
廠商: ON SEMICONDUCTOR
英文描述: Ignition IGBT 19 Amps, 350 Volts(19A,350V鉗位電壓,點(diǎn)火絕緣柵雙極型晶體管(D2PAK封裝))
中文描述: 點(diǎn)火IGBT一十九安培,350伏特,(第19A,350V鉗位電壓,點(diǎn)火絕緣柵雙極型晶體管(采用D2PAK封裝))
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 72K
代理商: MGB19N35CL
MGP19N35CL, MGB19N35CL
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 3.)
Turn–Off Delay Time (Inductive)
td(off)
VCC = 300 V,
IC = 10 A
RG = 1 k
,
L = 300
μ
H
5.0
10
μ
Sec
Fall Time (Inductive)
tf
6.0
10
Turn–Off Delay Time (Resistive)
td(off)
VCC = 300 V,
IC = 6.5 A
RG = 1 k
,
RL = 46
VCC = 10 V,
IC = 6.5 A
RG = 1 k
,
RL = 1.5
6.0
10
μ
Sec
Fall Time (Resistive)
tf
12
20
Turn–On Delay Time
td(on)
1.5
2.0
μ
Sec
Rise Time
tr
4.0
6.0
3. Pulse Test: Pulse Width
300
μ
S, Duty Cycle
2%.
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