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參數(shù)資料
| 型號： | MGF7169C |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | UHF BAND GaAs POWER AMPLIFIER |
| 中文描述： | 超高頻波段GaAs功率放大器 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 351K |
| 代理商： | MGF7169C |
Aug. '97
Technical Note
MITSUBISHI ELECTRIC
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MGF7169C
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
(1/20)
Specifications are subject to change without notice.
DESCRIPTION
The MGF7169C is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
APPLICATION
1.9GHz band handheld phone
QUALITY GRADE
GG
FEATURES
Low voltage operation :
Vd=3.0V
High output power :
Po=28dBm typ. @f=1.85~1.91GHz
Low distortion :
ACP=-46dBc max. @Po=28dBm
High efficiency :
Id=520mA typ. @Po=28dBm
Small size :
7.0 x 6.1 x 1.1 mm
Surface mount package
2 Stage Amplifier
External matching circuit is required
Block Diagram of this IC and Application Circuit Example.
Battery
Regulator
VDD
VD1
HPA
Pout
Matching
circuit
VD2
MGF7169C
Pin
Matching
circuit
VG1
VG2
Negative voltage
generator
Pi
Po
Vd1
Vd2
Vg
MC
GND
CASE
: RF input
: RF output
: Drain bias 1
: Drain bias 2
: Gate bias
: Note1
: Connect to GND
: Connect to GND
PIN CONFIGURATION
(TOP VIEW)
GND
Vd2 / Po
Vg1
Vg2
Pi
Vd1
GND
MC
Note1:Connect to matching circuit
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