| 型號 | 廠商 | 描述 |
| mgf4951 2 3 4 |
Mitsubishi Electric Corporation | SUPER LOW NOISE InGaAs HEMT |
| mgf7124a |
Mitsubishi Electric Corporation | 1.9GHz BAND AMPLIFIER MMIC |
| mgf7168c 2 3 4 5 6 7 8 9 10 11 12 |
Mitsubishi Electric Corporation | UHF BAND GaAs POWER AMPLIFIER |
| mgf7169c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Mitsubishi Electric Corporation | UHF BAND GaAs POWER AMPLIFIER |
| mgf7170ac 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Mitsubishi Electric Corporation | UHF BAND GaAs POWER AMPLIFIER |
| mgf7175c 2 |
Mitsubishi Electric Corporation | 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER |
| mgf7176c 2 |
Mitsubishi Electric Corporation | 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER |
| mgfc1403 2 3 4 5 6 |
Mitsubishi Electric Corporation | FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
| mgfc1801 2 3 4 5 6 |
Mitsubishi Electric Corporation | FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
| mgfc38v5867 2 3 |
Mitsubishi Electric Corporation | 5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET |
| mgfc38v5964 2 3 |
Mitsubishi Electric Corporation | RECTIFIER BRIDGE 10A 200V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX |
| mgfc38v6472 2 3 |
Mitsubishi Electric Corporation | RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX |
| mgfc39v5964 2 |
Mitsubishi Electric Corporation | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| mgfc39v5258 2 |
Mitsubishi Electric Corporation | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1200uF; Voltage: 6.3V; Case Size: 8x15 mm; Packaging: Bulk |
| mgfc39v5964a 2 |
Mitsubishi Electric Corporation | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| mgfc39v3436 2 |
Mitsubishi Electric Corporation | 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| mgfc40v3742a 2 |
Mitsubishi Electric Corporation | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 6.3V; Case Size: 10x12.5 mm; Packaging: Bulk |
| mgfc40v4450a 2 |
Mitsubishi Electric Corporation | 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| mgfc40v7177a 2 |
Mitsubishi Electric Corporation | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| mgfc40v7177b 2 |
Mitsubishi Electric Corporation | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| mgfc40v7177 2 |
Mitsubishi Electric Corporation | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| mgfc40v6472 2 |
Mitsubishi Electric Corporation | 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| mgfc40v5258 2 |
Mitsubishi Electric Corporation | 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| mgfc41v5964 2 |
Mitsubishi Electric Corporation | 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| mgfc44v6472 2 |
Mitsubishi Electric Corporation | 6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET |
| mgfc44v3436 2 |
Mitsubishi Electric Corporation | 3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET |
| mgfc44v3642 2 |
Mitsubishi Electric Corporation | 3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET |
| mgfc44v4450 2 |
Mitsubishi Electric Corporation | 4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET |
| mgfc44v5964 2 |
Mitsubishi Electric Corporation | 5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET |
| mgfc45v3436a 2 |
Mitsubishi Electric Corporation | 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| mgfc45v3642a 2 |
Mitsubishi Electric Corporation | 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| mgfc45v4450a 2 |
Mitsubishi Electric Corporation | 4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| mgfc45v6472a 2 |
Mitsubishi Electric Corporation | 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| mgfc47v5864 |
Mitsubishi Electric Corporation | 5.8-6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| mgfk25v4045 2 |
Mitsubishi Electric Corporation | 14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET |
| mgfk30v4045 2 |
Mitsubishi Electric Corporation | 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET |
| mgfk35v2228 2 |
Mitsubishi Electric Corporation | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 2700uF; Voltage: 10V; Case Size: 12.5x20 mm; Packaging: Bulk |
| mgfk35v2732 2 |
Mitsubishi Electric Corporation | 12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET |
| mgfk35v4045 2 |
Mitsubishi Electric Corporation | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 8x11.5 mm; Packaging: Bulk |
| mgfk37v4045 2 3 |
Mitsubishi Electric Corporation | DIODE ZENER TRIPLE ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL |
| mgfk38a3745 2 3 4 5 |
Mitsubishi Electric Corporation | 13.75-14.50GHz BAND 6W INTERNALLY MATCHED GaAs FET |
| mgfk38v2228 2 3 4 5 |
Mitsubishi Electric Corporation | RECTIFIER BRIDGE 35A 1000V 400A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY |
| mgfk38v2732 2 3 4 5 |
Mitsubishi Electric Corporation | RECTIFIER BRIDGE 10A 50V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX |
| mgfl45v1920a |
Mitsubishi Electric Corporation | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| mgfl45v1920 2 3 |
Mitsubishi Electric Corporation | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| mgfx39v0717 2 |
Mitsubishi Electric Corporation | 10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET |
| mgp11n60ed 2 3 4 5 6 |
MOTOROLA INC | 11A，600V Insulated Gate Biploar Transistor with Anti-Parallel Diode（N-Channel Enhancement-Mode Silicon Gate）(帶軟恢復(fù)超快速整流器的絕緣柵雙極性晶體管（N溝道增強(qiáng)型硅門）) |
| mgp11n60ed 2 3 4 5 6 |
ON SEMICONDUCTOR | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
| mgp20n40cl 2 3 4 5 6 |
MOTOROLA INC | CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| mgp20n40cl 2 3 4 5 6 |
ON SEMICONDUCTOR | SMARTDISCRETES Internally Clamped, N-Channel IGBT |