型號: | MGFC38V5867 |
廠商: | Mitsubishi Electric Corporation |
英文描述: | 5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET |
中文描述: | 5.8?6.75 GHz頻段6W內(nèi)部匹配GAASFET |
文件頁數(shù): | 1/3頁 |
文件大?。?/td> | 262K |
代理商: | MGFC38V5867 |
相關(guān)PDF資料 |
PDF描述 |
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MGFC38V5964 | RECTIFIER BRIDGE 10A 200V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX |
MGFC38V6472 | RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX |
MGFC39V5964 | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
MGFC39V5258 | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1200uF; Voltage: 6.3V; Case Size: 8x15 mm; Packaging: Bulk |
MGFC39V5964A | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MGFC38V5867_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC38V5964 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC38V5964_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC38V5964_97 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET |
MGFC38V6472 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |