型號: | MGFC40V7177B |
廠商: | Mitsubishi Electric Corporation |
英文描述: | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
中文描述: | 7.1 - 7.7GHz波段10W的內(nèi)部匹配砷化鎵場效應(yīng)管 |
文件頁數(shù): | 1/2頁 |
文件大小: | 100K |
代理商: | MGFC40V7177B |
相關(guān)PDF資料 |
PDF描述 |
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MGFC40V7177 | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V6472 | 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V5258 | 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC41V5964 | 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
MGFC44V6472 | 6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MGFC40V7785 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7785A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7785B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC41V3642 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
MGFC41V3642_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |