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參數(shù)資料
| 型號(hào)： | MGFC45V3642A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 3.6 - 4.2GHz波段32W內(nèi)部匹配砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | MGFC45V3642A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3642A
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
S parameters
( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
f
S11
S21
S12
S22
(GHz)
3.50
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
0.51
165
3.71
42
0.05
-21
0.39
-29
3.60
0.55
125
3.82
14
0.06
-52
0.29
-56
3.70
0.56
93
3.84
-15
0.07
-80
0.22
-94
3.80
0.54
67
3.81
-41
0.07
-107
0.21
-142
3.90
0.47
40
3.86
-68
0.08
-134
0.23
-177
4.00
0.37
5
3.87
-97
0.09
-162
0.26
149
4.10
0.27
-42
3.83
-125
0.09
169
0.26
122
4.20
0.26
0.40
-117
-174
3.64
3.25
-156
174
0.09
0.09
141
108
0.21
0.09
93
63
4.30
Feb.'99
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
P1dB,GLP vs. f
41
42
43
44
45
46
47
3.5
3.6
3.7
3.8
3.9
4
4.1
4.2
4.3
FREQUENCY f (GHz)
O
10
12
14
16
18
20
22
L
VDS=10V
IDS=8A
P1dB
GLP
Po, P.A.E. vs. Pin
25
30
35
40
45
50
20
25
30
35
40
INPUT POWER Pin (dBm)
O
0
20
40
60
80
100
VDS=10V
IDS=8A
f=3.9GHz
Po
add
P
Po,IM3 vs. Pin
26
28
30
32
34
36
38
40
17
19
INPU21
23
25
27
29
31
O
-60
-50
-40
-30
-20
-10
0
10
VDS=10V
IDS=8A
f1=4.20GHz
f2=4.21GHz
2-tone test
IM3
Po
I
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| MGFC45V4450A | 4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC45V3642A_04 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A_03 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5053A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5867 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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