型號(hào): | MGFL45V1920 |
廠商: | Mitsubishi Electric Corporation |
英文描述: | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
中文描述: | 1.9 - 2.0GHz的頻段32W國(guó)內(nèi)MATCHD砷化鎵場(chǎng)效應(yīng)管 |
文件頁(yè)數(shù): | 2/3頁(yè) |
文件大小: | 301K |
代理商: | MGFL45V1920 |
相關(guān)PDF資料 |
PDF描述 |
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MGFX39V0717 | 10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET |
MGP11N60ED | 11A,600V Insulated Gate Biploar Transistor with Anti-Parallel Diode(N-Channel Enhancement-Mode Silicon Gate)(帶軟恢復(fù)超快速整流器的絕緣柵雙極性晶體管(N溝道增強(qiáng)型硅門(mén))) |
MGP11N60ED | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
MGP20N40CL | CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
MGP20N40CL | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MGFL45V1920A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
MGFL45V1920A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
MGFL45V1920A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 32W |
MGFL48L1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 60W GaAs FET |
MGFL48V1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 60W |