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參數(shù)資料
| 型號： | MGP20N40CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| 中文描述： | 20 A, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 133K |
| 代理商： | MGP20N40CL |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(IClamp = 10 mA, TJ = –40 to 150
°
C)
BVCES
370
405
430
Vdc
Zero Gate Voltage Collector Current
(VCE = 350 V, VGE = 0 V, TJ = 150
°
C)
(VCE = 15 V, VGE = 0 V, TJ = 150
°
C)
Resistance Gate–Emitter (TJ = –40 to 150
°
C)
Gate–Emitter Breakdown Voltage (IG = 2 mA)
Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = 150
°
C)
Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA)
ICES
—
—
—
—
500
100
A
RGE
BVGES
ICES
BVCER
10k
16k
30k
11
13
15
V
—
—
50
mA
26
40
120
V
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
(VCE = VGE, IC = 1 mA, TJ = 150
°
C)
VGE(th)
1.0
0.75
1.7
—
2.2
1.8
V
Collector–Emitter On–Voltage
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150
°
C)
Forward Transconductance (VCE
VCE(on)
—
—
—
1.1
1.4
1.4
1.4
1.9
1.8
V
5.0 V, IC = 10 A)
gfs
10
18
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
2800
—
pF
Output Capacitance
—
200
—
Transfer Capacitance
—
25
—
SWITCHING CHARACTERISTICS (1)
Total Gate Charge
(VCC = 280 V, IC = 20 A,
VGE = 5 V)
280 V I
Qg
Qgs
Qgd
td(off)
tf
—
45
80
nC
Gate–Emitter Charge
—
8.0
—
Gate–Collector Charge
—
20
—
Turn–Off Delay Time
(VCC = 320 V,C
(CC
L = 200 H, RG = 1 K )
—
14
—
μ
s
Fall Time
,
—
4.0
—
Turn–On Delay Time
(VCC = 14 V,C
(CC
L = 200 H, RG = 1 K )
td(on)
tr
—
2.0
—
μ
s
Rise Time
,
—
6.0
—
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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