- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371104 > MGP21N60E (MOTOROLA INC) Insulated Gate Bipolar Transistor PDF資料下載
參數(shù)資料
| 型號： | MGP21N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 127K |
| 代理商： | MGP21N60E |
4
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Turn–Off Losses versus
Gate Resistance
Figure 8. Turn–Off Losses versus
Junction Temperature
Figure 9. Turn–Off Losses versus
Collector–To–Emitter Current
Figure 10. Reverse Biased Safe
Operating Area
45
5.0
RG, GATE RESISTANCE (OHMS)
1.5
1.3
0.9
TJ, JUNCTION TEMPERATURE (
°
C)
150
–50
0.4
0
10
20
0
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
1.2
0.4
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1.0
100
10
1.0
T
I
0.5
15
25
–25
0
25
0.8
1.6
5.0
10
100
1000
T
T
35
1.2
50
75
100
125
0.8
1.4
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 20 A
IC = 15 A
IC = 10 A
VCC = 360 V
VGE = 15 V
RG = 20
IC = 20 A
IC = 15 A
IC = 10 A
TJ = 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
RGE = 20
VGE = 15 V
1.1
0.7
1.0
0.2
0.6
15
相關PDF資料 |
PDF描述 |
|---|---|
| MGP21N60E | Insulated Gate Bipolar Transistor |
| MGP4N60E | Insulated Gate Bipolar Transistor |
| MGP4N60E | Insulated Gate Bipolar Transistor |
| MGP7N60E | Insulated Gate Bipolar Transistor |
| MGP7N60E | Insulated Gate Bipolar Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGP25-PS | 制造商:SMC Corporation of America 功能描述:SEAL KIT |
| MGP3002X | 制造商:Siemens 功能描述: |
| MGP3006 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GHz PLL with I2C Bus and Four Chip Addresses |
| MGP3006X | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GHz PLL with I2C Bus and Four Chip Addresses |
| MGP3006X6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GHz PLL with I2C Bus and Four Chip Addresses |
發(fā)布緊急采購，3分鐘左右您將得到回復。