型號 廠商 描述
mgp21n60e
2 3 4 5 6
MOTOROLA INC Insulated Gate Bipolar Transistor
mgp21n60e
2 3 4 5 6
ON SEMICONDUCTOR Insulated Gate Bipolar Transistor
mgp4n60e
2 3 4 5 6
MOTOROLA INC Insulated Gate Bipolar Transistor
mgp4n60e
2 3 4 5 6
ON SEMICONDUCTOR Insulated Gate Bipolar Transistor
mgp7n60e
2 3 4 5 6
MOTOROLA INC Insulated Gate Bipolar Transistor
mgp7n60e
2 3 4 5 6
ON SEMICONDUCTOR Insulated Gate Bipolar Transistor
mgs05n60d
2 3 4 5 6
MOTOROLA INC Insulated Gate Bipolar Transistor
mgs05n60d
2 3 4 5 6
ON SEMICONDUCTOR Insulated Gate Bipolar Transistor
mgs13002d
2 3 4 5 6
MOTOROLA INC Insulated Gate Bipolar Transistor
mgs13002d
2 3 4 5 6
ON SEMICONDUCTOR Insulated Gate Bipolar Transistor
mgsf1n02lt1
2 3 4 5 6
MOTOROLA INC N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
mgsf1n02lt1
2 3 4 5 6
ON SEMICONDUCTOR Power MOSFET 750 mAmps, 20 Volts
mgsf1n02lt3
2 3 4 5 6
ON SEMICONDUCTOR Power MOSFET 750 mAmps, 20 Volts
mgsf1n02el
2 3 4 5 6
Motorola, Inc. N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET
mgsf1n02elt1
2 3 4 5 6
MOTOROLA INC N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET
mgsf1n02elt3
2 3 4 5 6
MOTOROLA INC N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET
mgsf1n02lt3
2 3 4 5 6
MOTOROLA INC N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
mgsf1n03lt1
2 3 4 5 6
MOTOROLA INC CHOKE, POWER, SHIELDED, 47UH; Inductor type:Shielded Power Choke; Inductance:47uH; Tolerance, inductance:30%; Resistance:250mR; Frequency, resonant:10MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
mgsf1n03lt1
2 3 4 5 6
ON SEMICONDUCTOR Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
mgsf1n03lt3
2 3 4 5 6
ON SEMICONDUCTOR Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
mgsf1n03lt3g
2 3 4 5 6
ON SEMICONDUCTOR Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
mgsf1n03lt3
2 3 4 5 6
MOTOROLA INC CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance:+/-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
mgsf1p02lt1
2 3 4 5 6
MOTOROLA INC P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
mgsf1p02elt1
2 3 4 5 6
ON SEMICONDUCTOR Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23
mgsf1p02elt3
2 3 4 5 6
ON SEMICONDUCTOR Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23
mgsf1p02lt3
2 3 4 5 6
ON SEMICONDUCTOR Power MOSFET 750 mAmps, 20 Volts
mgsf1p02lt3
2 3 4 5 6
MOTOROLA INC P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
mgsf3441xt1
2 3 4
MOTOROLA INC Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
mgsf3441xt3
2 3 4
MOTOROLA INC Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
mgsf3454vt1
2 3 4 5 6
MOTOROLA INC N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
mgsf3454xt1
2 3 4 5 6
MOTOROLA INC N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
mh16d72aklb-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation Circular Connector; No. of Contacts:79; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:20-35 RoHS Compliant: No
mh16d72aklb-75
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation JT 41C 41#20 PIN GRND PLUG
mh16s64ama-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:12-35 RoHS Compliant: No
mh16s64ama-12
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation JT 22C 22#22D PIN RECP
mh16s64ama-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation JT 22C 22#22D SKT WALL RECP
mh16s64apfc-7
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64apfc-7l
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64apfc-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64apfc-8l
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64aphb-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM
mh16s64aphb-7
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM
mh16s64aphb-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM
mh16s64bamd-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64damd-8
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM
mh16s64ffb-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64ffb-10l
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64pfc-10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64pfc-10l
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
mh16s64pfc-7
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mitsubishi Electric Corporation 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM