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參數(shù)資料
| 型號(hào)： | MGP4N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 124K |
| 代理商： | MGP4N60E |
4
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Turn–Off Losses versus
Gate Resistance
Figure 8. Turn–Off Losses versus
Junction Temperature
Figure 9. Turn–Off Losses versus
Collector–To–Emitter Current
Figure 10. Reverse Biased Safe
Operating Area
45
5.0
RG, GATE RESISTANCE (OHMS)
0.2
0.1
TJ, JUNCTION TEMPERATURE (
°
C)
150
–50
0.05
0
2.0
3.0
0
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
0.10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1.0
10
1.0
T
I
0
15
25
–25
0
25
0.10
0.20
1.0
10
100
1000
T
T
35
0.15
50
75
100
125
0.15
0.05
0.20
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
IC = 2.0 A
IC = 1.0 A
VCC = 360 V
VGE = 15 V
RG = 20
IC = 3.0 A
IC = 2.0 A
IC = 1.5 A
TJ = 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
RGE = 20
VGE = 15 V
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PDF描述 |
|---|---|
| MGP4N60E | Insulated Gate Bipolar Transistor |
| MGP7N60E | Insulated Gate Bipolar Transistor |
| MGP7N60E | Insulated Gate Bipolar Transistor |
| MGS05N60D | Insulated Gate Bipolar Transistor |
| MGS05N60D | Insulated Gate Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGP4N60ED | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ONS 功能描述:ON SEMICONDUCTOR NXF7C 制造商:ON Semiconductor 功能描述: |
| MGP50-1000-B | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-C | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-D | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
| MGP50-1000-F | 制造商:RCD 制造商全稱:RCD COMPONENTS INC. 功能描述:METAL FILM MELF RESISTORS |
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