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參數(shù)資料
| 型號： | MGSF1P02LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 750 mAmps, 20 Volts |
| 中文描述： | 750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 195K |
| 代理商： | MGSF1P02LT3 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
$ !
"
# !""# !"
Part of the GreenLine
Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power manage-
ment in portable and battery–powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
IDM
20
Vdc
Gate–to–Source Voltage — Continuous
±
20
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Pulsed Drain Current (tp
≤
10
μ
s)
750
2000
mA
Total Power Dissipation @ TA = 25
°
C
Operating and Storage Temperature Range
PD
225
mW
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
625
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF1P02LT1
7
″
8mm embossed tape
3000
MGSF1P02LT3
13
″
8mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MGSF1P02LT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 318–08, Style 21
SOT–23 (TO–236AB)
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
Motorola Preferred Device
1
2
3
3 DRAIN
1
GATE
2 SOURCE
相關PDF資料 |
PDF描述 |
|---|---|
| MGSF1P02LT3 | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF3441XT1 | Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors |
| MGSF3441XT3 | Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors |
| MGSF3454VT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF3454XT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF2N02E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02EL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT1 | 功能描述:MOSFET 20V 2.8A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF2N02ELT1G | 功能描述:MOSFET NFET SOT23 20V 2.8A 85mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF2N02ELT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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